Isbn: 9781681733876 - low substrate temperature modeling outlook of scaled n-mosfet (synthesis lectures on emerging engineering technologies) (2 Ergebnisse)

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    Sprache: Englisch

    Verlag: Morgan & Claypool Publishers, "Synthesis Lectures on Emerging Engineering Technologies" series, [San Raphael, CA], 2018

    1681733870 / 9781681733876

    • Hardcover
    • Erstausgabe

    Anbieter: Philip Gibbons Books, Newcastle Emlyn, Vereinigtes KönigreichPhilip Gibbons Books

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    Zustand: Gebraucht - Wie neu

    EUR 19,22

    EUR 41,98 Versand 
    Versand von Vereinigtes Königreich nach USA

    Anzahl: 1 verfügbar

    Hardcover/Hardback. Zustand: As New. No Jacket. First edition. Digital edition: this copy printed in UK. Quarto-size, 92 pages (xii, 80), graphs, mathematical notation; publisher's pale blue laminated covers; Issued without jacket.

  • Sprache: Englisch

    Verlag: Morgan & Claypool Publishers, 2018

    1681733870 / 9781681733876

    • Hardcover

    Anbieter: Leopolis, Kraków, PolenLeopolis

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    Zustand: Neu

    EUR 28,32

    EUR 65,00 Versand 
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    Hardcover. Zustand: New. 8vo (24.5 cm), XI, 77 pp. Publisher's laminated boards. Synopsis: This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.