Sprache: Englisch
Verlag: Morgan & Claypool Publishers (edition ), 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Anbieter: BooksRun, Philadelphia, PA, USA
Paperback. Zustand: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.
Sprache: Englisch
Verlag: Morgan & Claypool Publishers (edition ), 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Anbieter: BooksRun, Philadelphia, PA, USA
Paperback. Zustand: Very Good. It's a well-cared-for item that has seen limited use. The item may show minor signs of wear. All the text is legible, with all pages included. It may have slight markings and/or highlighting.
Sprache: Englisch
Verlag: Morgan & Claypool Publishers (edition ), 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Anbieter: BooksRun, Philadelphia, PA, USA
Paperback. Zustand: New. The item is brand new, never used or read. It's in perfect condition and may include supplements and/or access codes or come shrink-wrapped.
Sprache: Englisch
Verlag: Morgan & Claypool Publishers, 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 39,34
Anzahl: 1 verfügbar
In den WarenkorbZustand: New. pp. 80.
Sprache: Englisch
Verlag: Morgan & Claypool Publishers, 2016
ISBN 10: 1627059296 ISBN 13: 9781627059299
Anbieter: Our Kind Of Books, Liphook, Vereinigtes Königreich
EUR 23,74
Anzahl: 2 verfügbar
In den WarenkorbSoft cover. Zustand: As New. This book has been in storage since publication and is unread. Hence the description as new. Synopsis: RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed.