9781402011948 - Towards the First Silicon Laser (NATO Science Series II: Mathematics, Physics and Chemistry, 93, Band 93) von Gaponenko, Sergey; Pavesi, Lorenzo; Negro, Luca Dal (5 Ergebnisse)

Zustand: Good. Pencil on inside page. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.

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Taschenbuch. Zustand: Neu. Towards the First Silicon Laser | Lorenzo Pavesi (u. a.) | Taschenbuch | xiv | Englisch | 2003 | Springer | EAN 9781402011948 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Zustand: New. Proceedings of the NATO Advanced Research Workshop, held in Trento, Italy, 21-26 September 2002 Editor(s): Pavesi, Lorenzo; Gaponenko, Sergey V.; Dal Negro, Luca. Series: NATO Science Series II. Num Pages: 496 pages, biography. BIC Classification: PHJ; TTBL. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 240 x 160 x 25. Weight in Grams: 694. . 2003. Softcover reprint of the original 1st ed. 2003. Paperback. . . . . Books ship from the US and Ireland.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.