Anbieter: World of Books (was SecondSale), Montgomery, IL, USA
Zustand: Good. Item in good condition. Textbooks may not include supplemental items i.e. CDs, access codes etc.
hardcover. Zustand: Very Good.
Anbieter: PBShop.store UK, Fairford, GLOS, Vereinigtes Königreich
EUR 113,93
Anzahl: 15 verfügbar
In den WarenkorbHRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 119,74
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. In.
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 146,53
Anzahl: 3 verfügbar
In den WarenkorbZustand: New. 250.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 171,66
Anzahl: 2 verfügbar
In den WarenkorbHardcover. Zustand: Brand New. 1st edition. 264 pages. 9.50x6.50x0.50 inches. In Stock.
EUR 132,20
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switc.
EUR 192,70
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Num Pages: 264 pages. BIC Classification: TJ; UKS. Category: (P) Professional & Vocational. Dimension: 242 x 158 x 18. Weight in Grams: 574. . 2016. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland.
Buch. Zustand: Neu. Neuware - Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science.