9780521336178 - modeling and characterization of rf and microwave power fets (cambridge rf and microwave engineering) von aaen, peter h. (4 Ergebnisse)
Sprache: Englisch
Verlag: Cambridge University Press 2011
Serie: Cambridge RF and Microwave Engineering, Buch 1 von 20. Buch 1 von 20 - Cambridge RF and Microwave Engineering
- Softcover
Anbieter: Optimon Books, Gravesend, KENT, Vereinigtes KönigreichOptimon Books
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EUR 84,73
EUR 20,86 VersandVersand von Vereinigtes Königreich nach USAAnzahl: 1 verfügbar
Paperback. Zustand: Fair. THERE ARE NO TARIFFS OR CUSTOMS DUTIES ON BOOKS. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization…and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Sprache: Englisch
Verlag: Cambridge University Press 2011
Serie: Cambridge RF and Microwave Engineering, Buch 1 von 20. Buch 1 von 20 - Cambridge RF and Microwave Engineering
- Softcover
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes KönigreichRia Christie Collections
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 103,42
EUR 13,88 VersandVersand von Vereinigtes Königreich nach USAAnzahl: Mehr als 20 verfügbar
Zustand: New. In.
Sprache: Englisch
Verlag: Cambridge University Press 2011
Serie: Cambridge RF and Microwave Engineering, Buch 1 von 20. Buch 1 von 20 - Cambridge RF and Microwave Engineering
- Softcover
Anbieter: Kennys Bookstore, Olney, MD, USAKennys Bookstore
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 155,60
EUR 9,22 VersandVersand innerhalb von USAAnzahl: Mehr als 20 verfügbar
Zustand: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, black & white illustrations. BIC Classification: TJFD5; TJFN. Category: (P) Professional & Vocational. Dimension: 245 x 171 x 21. Weight in Grams: 634. . 2…011. 1st Edition. paperback. . . . . Books ship from the US and Ireland.
Sprache: Englisch
Verlag: Cambridge University Press 2011
Serie: Cambridge RF and Microwave Engineering, Buch 1 von 20. Buch 1 von 20 - Cambridge RF and Microwave Engineering
- Softcover
Anbieter: AHA-BUCH GmbH, Einbeck, DeutschlandAHA-BUCH GmbH
Verkäufer/-in kontaktierenVerkäufer/-in mit 5 SternenZustand: Neu
EUR 152,81
EUR 63,28 VersandVersand von Deutschland nach USAAnzahl: 1 verfügbar
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characteriza…tion and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
