Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 79,79
Anzahl: 3 verfügbar
In den WarenkorbZustand: New. pp. 375.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 76,12
Anzahl: 2 verfügbar
In den WarenkorbHardcover. Zustand: Brand New. 375 pages. 9.50x7.50x1.00 inches. In Stock.
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 116,38
Anzahl: 3 verfügbar
In den WarenkorbZustand: New.
Anbieter: moluna, Greven, Deutschland
Zustand: New. Authored by the lead inventor and developer of FinFET and developers of the BSIM-CMG standard model, providing an expert&rsquos insight into the specifications of the standardA new edition of the original groundbreaking book on the industr.
Anbieter: preigu, Osnabrück, Deutschland
Taschenbuch. Zustand: Neu. FinFET/GAA Modeling for IC Simulation and Design | Using the BSIM-CMG Standard | Yogesh Singh Chauhan (u. a.) | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2024 | Elsevier LTD | EAN 9780323957298 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu.
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Taschenbuch. Zustand: Neu. Neuware -FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters.Libri GmbH, Europaallee 1, 36244 Bad Hersfeld 307 pp. Englisch.
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 188,13
Anzahl: 3 verfügbar
In den WarenkorbZustand: New.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 182,02
Anzahl: 2 verfügbar
In den WarenkorbPaperback. Zustand: Brand New. 2nd edition. 350 pages. 9.25x7.50x9.30 inches. In Stock.
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Neuware - FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters.
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
EUR 193,64
Anzahl: 3 verfügbar
In den WarenkorbZustand: New.
Anbieter: moluna, Greven, Deutschland
EUR 246,48
Anzahl: Mehr als 20 verfügbar
In den WarenkorbZustand: New. Über den AutorYogesh Singh Chauhan is a Professor at the Indian Institute of Technology Kanpur. His research interests include the physics, characterization, and modeling of nanoscale semiconductor devices, and RF circuit design.
Verlag: Elsevier Science Publishing Co Inc Mai 2024, 2024
ISBN 10: 0323998712 ISBN 13: 9780323998710
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Neuware - GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.