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Zustand: New. In English.

Buch. Zustand: Neu. Neuware - The present book is divided into two parts. Part I comprises four chapters which review the current state of the art in different areas of research on 2D materials and devices. Chapter 1 provides an excellent overview of the status of 2D material synthesis and puts special emphasis on the scalability of the discussed techniques and the attainable 2D material quality. Chapter 2 presents an overview on recent progress in the field of flexible graphene devices and describes a flexible graphene-based radio frequency receiver operating at 2.4 GHz. In Chapter 3, a thorough overview on the application of 2D materials in optoelectronics is given, and Chapter 4 comprehensively discusses gas sensors made of 2D materials. The eight chapters of Part II deal with specific important aspects of 2D materials and devices. Chapter 5 describes theoretical investigations on the stability and electronic structure of monolayer TMD (transition metal dichalcogenide) alloys and, in Chapter 6, the thermal conductivity of graphene nanoribbons is studied by molecular dynamics simulations. Chapter 7 presents the results of experimental investigations on the visibility of exfoliated TMD and black phosphorus flakes. The following three chapters are devoted to the simulation of advanced graphene transistors: Chapter 8 deals with the effects of band-to-band tunneling and edge roughness on the behavior of graphene nanoribbon MOSFETs. In Chapter 9, recent results on the steady-state and RF operation of graphene nanoribbon transistors are presented, and in Chapter 10 a compact modeling approach for a novel graphene-based transistor type (called graphene base transistor) is elaborated. The last two chapters of the book deal with several aspects of the application of graphene in non-transistor devices: Chapter 11 presents the analysis of graphene nanomechanical mass sensors and Chapter 12 provides a discussion on graphene-based field emitters.…

Zustand: New. KlappentextrnrnThe present book is divided into two parts. Part I comprises four chapters which review the current state of the art in different areas of research on 2D materials and devices. Chapter 1 provides an excellent overview of the statu.

Hardcover. Zustand: Used; Very Good. Dispatched, from the UK, within 48 hours of ordering. Though second-hand, the book is still in very good shape. Minimal signs of usage may include very minor creasing on the cover or on the spine. Damaged cover. The cover of is slightly damaged for instance a torn or bent corner.…

Zustand: New. In English.

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Hardcover. Zustand: Brand New. 1st edition. 340 pages. 9.00x6.20x0.80 inches. In Stock.

Buch. Zustand: Neu. Neuware - This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology. …

Gebunden. Zustand: New. Juin J Liou, Frank Schwierz, Hei WongThis book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorou.

Zustand: New. Provides a comprehensive overview of all the important issues concerning modern Si MOSFETs, including the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs and non-classical MOSFET concepts are treated in detail. Num Pages: 340 pages, 171 black & white illustrations. BIC Classification: TBN. Category: (G) General (US: Trade); (UP) Postgraduate, Research & Scholarly. Dimension: 236 x 156 x 19. Weight in Grams: 640. . 2010. 1st Edition. hardcover. . . . . Books ship from the US and Ireland.…

Zustand: New. In English.

Buch. Zustand: Neu. Nanometer CMOS | Frank Schwierz (u. a.) | Buch | Einband - fest (Hardcover) | Englisch | 2010 | Pan Stanford Publishing Pte Ltd | EAN 9789814241083 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu.

Zustand: New. pp. xii + 486 Illus.

Hardcover. Zustand: Brand New. 512 pages. 9.50x6.25x1.25 inches. In Stock.

Zustand: New. Responsible for many of the innovations of the 20th century, transistors are the backbone of the electronics industry. The applications of microwave transistors in multimedia and wireless communications comprise one of the fastest growing fields in semiconductor electronics. Num Pages: 504 pages, Illustrations. BIC Classification: TJFN. Category: (P) Professional & Vocational. Dimension: 238 x 169 x 32. Weight in Grams: 852. . 2002. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland. …