heyns marc (17 Ergebnisse)

Hardcover. Zustand: Very Good. No Jacket. Former library book; May have limited writing in cover pages. Pages are unmarked. ~ ThriftBooks: Read More, Spend Less 1.6.

Zustand: Used - Very Good. VG hardback. 1st ed. Materials Research Society Symposium Proceedings volume 447 (Symposium held Dec.1996 in Boston). No inscriptions, etc.; foot of spine a little bumped.

Zustand: New. In.

Hardcover. Zustand: Brand New. 154 pages. 9.00x6.25x0.75 inches. In Stock.

Hardcover. Zustand: Like New. First Edition. First Edition, First Printing. Published by Materials Research Society, 1995. Octavo. Hardcover. Book is like new with light smudges to top page ends. 100% positive feedback. 30 day money back guarantee. NEXT DAY SHIPPING! Excellent customer service. All books packed carefully and ship with free delivery confirmation/tracking. All books come with free bookmarks. Ships from Sag Harbor, New York.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - It is clear that concern for the preservation of the environment is growing. The IC industry is reputed to be a clean one, and the introduction of electronic systems has played a pivotal role in developing technologies that help to protect the environment. However, it must also be realized that the electronic industry consumes huge amounts of energy, chemicals, technical gases and even water. This book provides an overview of the available scientific information on environmentally benign IC production. A broad range of topics is addressed including work on resource reduction for chemicals, gases and DI water, reuse or recycling of chemicals, waste treatment strategies, environmentally friendly alternative technologies and analytical technologies for environmental studies. Undoubtedly, environmental concerns are leading to drastic changes in state-of-the-art processing, and new technologies are emerging from the strive towards lowering the environmental impact of the IC industry.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Paperback. Zustand: Wie neu. 1st ed. 412 S.; Ill. Like new. Shrink wrapped. Sprache: Englisch Gewicht in Gramm: 825.

Zustand: New. In.

Zustand: New. In.

Zustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.

Buch. Zustand: Neu. Neuware -This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 408 pp. Englisch.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.

Paperback. Zustand: Brand New. 383 pages. 9.00x6.00x0.92 inches. In Stock.

Zustand: New. Do we know how to make complex engineered substrates (such as Germanium-on-Insulator)? Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? This book offers a view of what has been done so far. Editor(s): Dimoulas, A.; Gusev, Evgeni; McIntyre, P. C.; Heyns, M. Series: Springer Series in Advanced Microelectronics. Num Pages: 406 pages, 11 black & white tables, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 23. Weight in Grams: 747. . 2007. 2007th Edition. hardcover. . . . . Books ship from the US and Ireland.

Softcover/Paperback. Zustand: Sehr gut. 400 p. Very good. Shrink wrapped. / Sehr guter Zustand. In Folie verschweißt. Sprache: Englisch Gewicht in Gramm: 760.