Verlag: Cambridge University Press, 2011
ISBN 10: 1605112763 ISBN 13: 9781605112763
Sprache: Englisch
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In den WarenkorbZustand: New. pp. ix + 207 143 Illus.
Verlag: Cambridge University Press, 2011
ISBN 10: 1605112763 ISBN 13: 9781605112763
Sprache: Englisch
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In den WarenkorbZustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
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In den WarenkorbZustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
Verlag: Cambridge University Press, 2014
ISBN 10: 1107406838 ISBN 13: 9781107406834
Sprache: Englisch
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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In den WarenkorbZustand: New. In.
Verlag: Dordrecht, Springer Netherland., 2006
ISBN 10: 140204366X ISBN 13: 9781402043666
Sprache: Englisch
Anbieter: Universitätsbuchhandlung Herta Hold GmbH, Berlin, Deutschland
EUR 30,00
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In den Warenkorb16 x 23 cm. XII, 492 S. XI, 492 p. Softcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. (NATO Science Series II: Mathematics, Physics and Chemistry). Sprache: Englisch.
Anbieter: Romtrade Corp., STERLING HEIGHTS, MI, USA
EUR 116,64
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In den WarenkorbZustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
Verlag: Cambridge University Press, 2014
ISBN 10: 1107406838 ISBN 13: 9781107406834
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
EUR 53,05
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In den WarenkorbTaschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Symposium S, 'Microelectromechanical Systems - Materials and Devices IV', held November 29-December 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts, focused on micro- and nanoelectromechanical systems (MEMS/NEMS), technologies which were spawned from the fabrication and integration of small-scale mechanical, electrical, thermal, magnetic, fluidic and optical sensors and actuators with micro-electronic components. MEMS and NEMS have enabled performance enhancements and manufacturing cost reductions in a number of applications, including optical displays, acceleration sensing, radio-frequency switching, drug delivery, chemical detection and power generation and storage. Although originally based on silicon microelectronics, the reach of MEMS and NEMS has extended well beyond traditional engineering materials and now includes nanomaterials (nanotubes, nanowires, nanoparticles), smart materials (piezoelectric and ferroelectric materials, shape memory alloys, pH-sensitive polymers), metamaterials and biomaterials (ceramic, metallic, polymeric, composite-based implant materials). While these new materials provide more freedom with regards to the design space of MEMS and NEMS, they also introduce a number of new fabrication and characterization challenges not previously encountered with silicon-based technology.
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In den WarenkorbZustand: New. pp. 378 Illus.
Anbieter: Buchpark, Trebbin, Deutschland
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In den WarenkorbZustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.
Anbieter: Phatpocket Limited, Waltham Abbey, HERTS, Vereinigtes Königreich
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In den WarenkorbZustand: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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In den WarenkorbZustand: New. In.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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In den WarenkorbZustand: New. In.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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In den WarenkorbZustand: New. In.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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In den WarenkorbZustand: New. In.
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In den WarenkorbZustand: New. In.
Verlag: Springer Berlin Heidelberg, Springer Berlin Heidelberg Nov 2007, 2007
ISBN 10: 3540714901 ISBN 13: 9783540714903
Sprache: Englisch
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
EUR 160,49
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In den WarenkorbBuch. Zustand: Neu. Neuware -This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 408 pp. Englisch.
Verlag: Springer Berlin Heidelberg, 2007
ISBN 10: 3540714901 ISBN 13: 9783540714903
Sprache: Englisch
Anbieter: Buchpark, Trebbin, Deutschland
EUR 117,83
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In den WarenkorbZustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 217,56
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In den WarenkorbZustand: New. In.
Verlag: Springer Berlin Heidelberg, 2010
ISBN 10: 3642090710 ISBN 13: 9783642090714
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
EUR 160,49
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In den WarenkorbTaschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
Verlag: Springer Berlin Heidelberg, 2007
ISBN 10: 3540714901 ISBN 13: 9783540714903
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
EUR 160,49
Währung umrechnenAnzahl: 1 verfügbar
In den WarenkorbBuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Will nanoelectronic devices continue to scale according to Moore's law At this moment, there is no easy answer since gate scaling is rapidly emerging as a serious roadblock for the evolution of CMOS technology. Channel engineering based on high-mobility semiconductor materials (e.g. strained Si, alternative orientation substrates, Ge or III-V compounds) could help overcome the obstacles since they offer performance enhancement. There are several concerns though. Do we know how to make complex engineered substrates (e.g. Germanium-on-Insulator) Which are the best interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds Can we process these materials in short channel transistors using flows, toolsets and know how similar to that in Si technology How do these materials and devices behave at the nanoscale The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any close to a viable Ge and III-V MOS technology.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 217,56
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In den WarenkorbZustand: New. In.
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
EUR 217,56
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In den WarenkorbZustand: New. In.
EUR 164,49
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In den WarenkorbTaschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The high level of attention and interest of the global community to NANO science and technology to a large extent is linked to the GIGAntic challenges for the c- tinuing growth of information technology, which sparked an unprecedented level of interdisciplinary and international cooperation among industrial and academic researchers, companies, IT market rivals, and countries, including former political and military rivals . Microelectronics technologies have reached a new stage in their development: The latest miniaturization of electronic devices is approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new ma- rials are being introduced into microelectronics manufacture at an unprecedented rate , and alternative technologies to mainstream complementary metal-oxide sem- conductors (CMOSs) are being considered . The very dynamic stage of science and technology related to the advanced and future electronics and photonics creates a growing gap between the large number of rapid publications and nanotechnology highlights in media on one side and fundamental understanding of underlying phenomena and an adequate evaluation of scientific discoveries and technological innovations on the other side. Writing a tutorial book on fundamentals of science and technology for electronics at this time is almost the same level of challenge as writing a history book during a revolution.
Anbieter: Buchpark, Trebbin, Deutschland
EUR 124,21
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In den WarenkorbZustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
EUR 168,73
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In den WarenkorbTaschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Verlag: Springer Netherlands, Springer Netherlands, 1998
ISBN 10: 0792350073 ISBN 13: 9780792350071
Sprache: Englisch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
EUR 168,73
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In den WarenkorbBuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 234,10
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In den WarenkorbPaperback. Zustand: Brand New. 376 pages. 9.25x6.10x0.85 inches. In Stock.
Verlag: Springer Berlin Heidelberg, 2007
ISBN 10: 3642090710 ISBN 13: 9783642090714
Sprache: Englisch
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
EUR 234,59
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In den WarenkorbPaperback. Zustand: Brand New. 383 pages. 9.00x6.00x0.92 inches. In Stock.
Verlag: Kluwer Academic Publishers, 1998
ISBN 10: 0792350073 ISBN 13: 9780792350071
Sprache: Englisch
Anbieter: Kennys Bookstore, Olney, MD, USA
EUR 249,89
Währung umrechnenAnzahl: 15 verfügbar
In den WarenkorbZustand: New. Proceedings of the NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: Towards an Atomic Scale Understanding, St. Petersburg, Russia, August 4-8, 1997 Editor(s): Garfunkel, Eric; Gusev, Evgeni; Vul', Alexander Ya. Series: NATO Science Partnership Subseries: 3. Num Pages: 507 pages, 114 black & white illustrations, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 244 x 170 x 28. Weight in Grams: 962. . 1998. Hardback. . . . . Books ship from the US and Ireland.