d d awschalom (26 Ergebnisse)

16 x 24 cm. XXIV, 198 S. XXIV, 198 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.

Zustand: New. In.

Zustand: New. In.

Zustand: New. In.

Buch. Zustand: Neu. Neuware -The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 226 pp. Englisch.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.

Zustand: New. In.

Paperback. Zustand: Brand New. 245 pages. 9.00x6.00x0.51 inches. In Stock.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.

Zustand: New.

Zustand: New.

Zustand: New. Offers a comparative review of spin electronics ("spintronics") research and development activities in the US, Japan, and Western Europe. This book covers materials, fabrication and characterization of magnetic nanostructures, magnetism and spin control in magnetic nanostructures, magneto-optical properties of semiconductors, and magneto devices. Editor(s): Awschalom, David D.; Buhrman, Robert A. (Cornell University, Ithaca, NY, USA); Daughton, James M. (NVE Corporation, Eden prairie, MN, USA); Molnar, Stephan von (Center for Materials Research and Technology, Florida State University); Roukes, Michael Lee (Condensed Matter Physics, California Institute of Technology, Pasadena, USA). Num Pages: 222 pages, biography. BIC Classification: RBP; RBX; TJF. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 14. Weight in Grams: 564. . 2003. Hardback. . . . . Books ship from the US and Ireland.

Zustand: New. pp. 536.

Buch. Zustand: Neu. Neuware -The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor 'quantum devices,' a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor 'spintronics' (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 332 pp. Englisch.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor 'quantum devices,' a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor 'spintronics' (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The past few decades of research and development in solid-state semicon ductor physics and electronics have witnessed a rapid growth in the drive to exploit quantum mechanics in the design and function of semiconductor devices. This has been fueled for instance by the remarkable advances in our ability to fabricate nanostructures such as quantum wells, quantum wires and quantum dots. Despite this contemporary focus on semiconductor 'quantum devices,' a principal quantum mechanical aspect of the electron - its spin has it accounts for an added quan largely been ignored (except in as much as tum mechanical degeneracy). In recent years, however, a new paradigm of electronics based on the spin degree of freedom of the electron has begun to emerge. This field of semiconductor 'spintronics' (spin transport electron ics or spin-based electronics) places electron spin rather than charge at the very center of interest. The underlying basis for this new electronics is the intimate connection between the charge and spin degrees of freedom of the electron via the Pauli principle. A crucial implication of this relationship is that spin effects can often be accessed through the orbital properties of the electron in the solid state. Examples for this are optical measurements of the spin state based on the Faraday effect and spin-dependent transport measure ments such as giant magneto-resistance (GMR). In this manner, information can be encoded in not only the electron's charge but also in its spin state, i. e.

Hardcover. Zustand: Brand New. 1st edition. 522 pages. 9.00x6.25x1.25 inches. In Stock.

Paperback. Zustand: Brand New. reprint edition. 328 pages. 8.90x5.98x1.02 inches. In Stock.

Hardcover. Zustand: Brand New. 1st edition. 315 pages. 9.25x6.25x0.50 inches. In Stock.

Hardcover. Zustand: Good. 1. Auflage. 2 volumes - Unread, cover with shelfwear and small damages. Immediately dispatched from Germany.

Zustand: New. pp. 1530.

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Gebunden. Zustand: New.

Hardcover. Zustand: Brand New. 1609 pages. 9.00x6.25x3.50 inches. In Stock.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This large reference work addresses a broad range of topics covering various aspects of spintronics science and technology, ranging from fundamental physics through materials properties and processing to established and emerging device technology and applications. It comprises a collection of chapters from a large international team of leading researchers across academia and industry, providing readers with an up-to-date and comprehensive review of this dynamic field of research. The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including the theory of giant magnetoresistance and an introduction to spin quantum computing. Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrid materials including Heusler compounds, magnetic semiconductors, molecular spintronic materials, carbon nanotubes and graphene. A separate section describesthe various methods used in the characterisation of spintronics materials, including spin-polarised photoemission, x-ray diffraction techniques and spin-polarised SEM. The third and final part of the Handbook contains chapters on spintronic device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics, and thermal effects in spintronics. Each chapter builds from the fundamentals through to the state-of-the-art, also considering the challenges faced by researchers and containing some indication of the direction that future work in the field is likely to take. This reference work will be an essential and long-standing resource for the spintronics community, whether in academic or industrial research.