Chow weng (14 Ergebnisse)

Hardcover. Zustand: Good. No Jacket. Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, Spend Less.

Hardcover. Zustand: Bon. Ancien livre de bibliothèque avec équipements. Edition 1997. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Good. Former library book. Edition 1997. Ammareal gives back up to 15% of this item's net price to charity organizations.…

hardcover. Zustand: Very Good. Most items will be dispatched the same or the next working day. A copy that has been read, but is in excellent condition. Pages are intact and not marred by notes or highlighting. The spine remains undamaged.

Zustand: Gut. 509 p. Ex-library book with stamp and catalogue number on spine. Slight to moderate traces of use and shelf wear. Good condition. 9783540576143 Sprache: Englisch Gewicht in Gramm: 936.

Hardcover. Zustand: Gut. 1. ed., corr. printing. Ex-library with stamp and library-signature. GOOD condition, some traces of use. C-02308 3540576142 Sprache: Englisch Gewicht in Gramm: 1150.

Zustand: New. In English.

Zustand: New. In English.

Zustand: New. In English.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Since Fall of 1993, when we completed the manuscript of our book 'Semi conductor-Laser Physics' [W.W. Chow, S.W. Koch, and M. Sargent III (Springer, Berlin, Heidelberg, 1994)] many new and exciting developments have taken place in the world of semiconductor lasers. Novel laser and ampli fier structures were developed, and others, for example, the VCSEL (vertical cavity surface emitting laser) and monolithic MOPA (master oscillator power amplifier), made the transition from research and development to production. When investigating some of these systems, we discovered instances when de vice performance, and thus design depend critically on details of the gain medium properties, e.g., spectral shape and carrier density dependence of the gain and refractive index. New material systems were also introduced, with optical emission wave lengths spanning from the mid-infrared to the ultraviolet. Particularly note worthy are laser and light-emitting diodes based on the wide-bandgap group-III nitride and II~VI compounds. These devices emit in the visible to ultra-violet wavelength range, which is important for the wide variety of optoelectronic applications. While these novel semiconductor-laser materi als show many similarities with the more conventional near-infrared systems, they also possess rather different material parameter combinations. These dif ferences appear as band structure modifications and as increased importance of Coulomb effects, such that, e.g., excitonic signatures resulting from the at tractive electron-hole interaction are generally significantly more prominent in the wide bandgap systems.…

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Since Fall of 1993, when we completed the manuscript of our book 'Semi conductor-Laser Physics' [W.W. Chow, S.W. Koch, and M. Sargent III (Springer, Berlin, Heidelberg, 1994)] many new and exciting developments have taken place in the world of semiconductor lasers. Novel laser and ampli fier structures were developed, and others, for example, the VCSEL (vertical cavity surface emitting laser) and monolithic MOPA (master oscillator power amplifier), made the transition from research and development to production. When investigating some of these systems, we discovered instances when de vice performance, and thus design depend critically on details of the gain medium properties, e.g., spectral shape and carrier density dependence of the gain and refractive index. New material systems were also introduced, with optical emission wave lengths spanning from the mid-infrared to the ultraviolet. Particularly note worthy are laser and light-emitting diodes based on the wide-bandgap group-III nitride and II~VI compounds. These devices emit in the visible to ultra-violet wavelength range, which is important for the wide variety of optoelectronic applications. While these novel semiconductor-laser materi als show many similarities with the more conventional near-infrared systems, they also possess rather different material parameter combinations. These dif ferences appear as band structure modifications and as increased importance of Coulomb effects, such that, e.g., excitonic signatures resulting from the at tractive electron-hole interaction are generally significantly more prominent in the wide bandgap systems.…

Taschenbuch. Zustand: Neu. Semiconductor-Laser Physics | Weng W. Chow (u. a.) | Taschenbuch | xii | Englisch | 2011 | Springer | EAN 9783642647529 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Taschenbuch. Zustand: Neu. Semiconductor-Laser Fundamentals | Physics of the Gain Materials | Weng W. Chow (u. a.) | Taschenbuch | x | Englisch | 2010 | Springer | EAN 9783642083860 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 260 | Sprache: Englisch | Produktart: Bücher | Since Fall of 1993, when we completed the manuscript of our book "Semi­ conductor-Laser Physics" [W.W. Chow, S.W. Koch, and M. Sargent III (Springer, Berlin, Heidelberg, 1994)] many new and exciting developments have taken place in the world of semiconductor lasers. Novel laser and ampli­ fier structures were developed, and others, for example, the VCSEL (vertical cavity surface emitting laser) and monolithic MOPA (master oscillator power amplifier), made the transition from research and development to production. When investigating some of these systems, we discovered instances when de­ vice performance, and thus design depend critically on details of the gain medium properties, e.g., spectral shape and carrier density dependence of the gain and refractive index. New material systems were also introduced, with optical emission wave­ lengths spanning from the mid-infrared to the ultraviolet. Particularly note­ worthy are laser and light-emitting diodes based on the wide-bandgap group-III nitride and II~VI compounds. These devices emit in the visible to ultra-violet wavelength range, which is important for the wide variety of optoelectronic applications. While these novel semiconductor-laser materi­ als show many similarities with the more conventional near-infrared systems, they also possess rather different material parameter combinations. These dif­ ferences appear as band structure modifications and as increased importance of Coulomb effects, such that, e.g., excitonic signatures resulting from the at­ tractive electron-hole interaction are generally significantly more prominent in the wide bandgap systems.…

Hardcover. Zustand: Very Good. Zustand des Schutzumschlags: Poor. 240 p. Includes illustrations. 0.0.