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Verlag: Springer International Publishing, 2014
ISBN 10: 3319083791ISBN 13: 9783319083797
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
Verlag: Springer International Publishing, 2016
ISBN 10: 331938127XISBN 13: 9783319381275
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
Verlag: Springer International Publishing, 2013
ISBN 10: 3319013386ISBN 13: 9783319013381
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.
Verlag: Springer Berlin Heidelberg, 2012
ISBN 10: 3642264166ISBN 13: 9783642264160
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is the first monograph which solely investigates the thermoelectric power in nanostructured materials under strong magnetic field (TPSM) in quantum confined nonlinear optical, III-V, II-VI, n-GaP, n-Ge, Te, Graphite, PtSb2, zerogap, II-V, Gallium Antimonide, stressed materials, Bismuth, IV-VI, lead germanium telluride, Zinc and Cadmium diphosphides, Bi2Te3, Antimony and carbon nanotubes, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization, the quantum wires and dots of the aforementioned superlattices by formulating the appropriate respective carrier energy spectra which in turn control the quantum processes in quantum effect devices. The TPSM in macro, quantum wire and quantum dot superlattices of optoelectronic materials in the presence of external photo-excitation have also been studied on the basis of newly formulated electron dispersion laws. This monograph contains 150 open research problems which form the very core and are useful for Ph. D students and researchers in the fields of materials science, solid state sciences, computational and theoretical nanoscience and technology, nanostructured thermodynamics and condensed matter physics in general in addition to the graduate courses on modern thermoelectric materials in various academic departments of many institutes and Universities.The book is written for researchers and engineers, post graduate students, professionals in the fields of materials science, nanoscience and technology, solid state sciences, nanostructured thermodynamics and condensed matter physics.
Verlag: Springer International Publishing, 2016
ISBN 10: 3319343505ISBN 13: 9783319343501
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.
Verlag: Springer Berlin Heidelberg, 2010
ISBN 10: 364210570XISBN 13: 9783642105708
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is the first monograph which solely investigates the thermoelectric power in nanostructured materials under strong magnetic field (TPSM) in quantum confined nonlinear optical, III-V, II-VI, n-GaP, n-Ge, Te, Graphite, PtSb2, zerogap, II-V, Gallium Antimonide, stressed materials, Bismuth, IV-VI, lead germanium telluride, Zinc and Cadmium diphosphides, Bi2Te3, Antimony and carbon nanotubes, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization, the quantum wires and dots of the aforementioned superlattices by formulating the appropriate respective carrier energy spectra which in turn control the quantum processes in quantum effect devices. The TPSM in macro, quantum wire and quantum dot superlattices of optoelectronic materials in the presence of external photo-excitation have also been studied on the basis of newly formulated electron dispersion laws. This monograph contains 150 open research problems which form the very core and are useful for Ph. D students and researchers in the fields of materials science, solid state sciences, computational and theoretical nanoscience and technology, nanostructured thermodynamics and condensed matter physics in general in addition to the graduate courses on modern thermoelectric materials in various academic departments of many institutes and Universities.The book is written for researchers and engineers, post graduate students, professionals in the fields of materials science, nanoscience and technology, solid state sciences, nanostructured thermodynamics and condensed matter physics.
Verlag: Springer International Publishing, 2013
ISBN 10: 3319013386ISBN 13: 9783319013381
Anbieter: Buchpark, Trebbin, Deutschland
Buch
Zustand: Sehr gut. Zustand: Sehr gut - Gepflegter, sauberer Zustand. | Seiten: 420.
Verlag: Springer, 2014
ISBN 10: 3319083791ISBN 13: 9783319083797
Anbieter: SpringBooks, Berlin, Deutschland
Buch
Hardcover. Zustand: As New. Unread, like new. Immediately dispatched from Germany.
Verlag: Springer International Publishing, 2016
ISBN 10: 331938127XISBN 13: 9783319381275
Anbieter: Buchpark, Trebbin, Deutschland
Buch
Zustand: Sehr gut. Zustand: Sehr gut - Gepflegter, sauberer Zustand. Außen: Buchschnitt verkürzt.
Verlag: Springer Berlin Heidelberg, 2012
ISBN 10: 3642312470ISBN 13: 9783642312472
Anbieter: moluna, Greven, Deutschland
Buch
Gebunden. Zustand: New.
Verlag: Springer Berlin Heidelberg, 2014
ISBN 10: 3642438644ISBN 13: 9783642438646
Anbieter: moluna, Greven, Deutschland
Buch
Zustand: New.
Verlag: Springer International Publishing, 2016
ISBN 10: 3319343505ISBN 13: 9783319343501
Anbieter: moluna, Greven, Deutschland
Buch
Zustand: New.
Verlag: Springer International Publishing, 2013
ISBN 10: 3319013386ISBN 13: 9783319013381
Anbieter: moluna, Greven, Deutschland
Buch
Gebunden. Zustand: New.