bhattacharya sitangshu (41 Ergebnisse)

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Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 424 | Sprache: Englisch | Produktart: Bücher | The merging of the concept of introduction of asymmetry of the wave vector space of the charge carriers in semiconductors with the modern techniques of fabric- ing nanostructured materials such as MBE, MOCVD, and FLL in one, two, and three dimensions (such as ultrathin ?lms, nipi structures, inversion and accumu- tion layers, quantum well superlattices, carbon nanotubes, quantum wires, quantum wire superlattices, quantumdots, magnetoinversionand accumulationlayers, qu- tum dot superlattices, etc. ) spawns not only useful quantum effect devices but also unearth new concepts in the realm of nanostructured materials science and related disciplines. It is worth remaking that these semiconductor nanostructures occupy a paramount position in the entire arena of low-dimensional science and technology by their own right and ?nd extensive applications in quantum registers, resonant tunneling diodes and transistors, quantum switches, quantum sensors, quantum logic gates, heterojunction ?eld-effect, quantum well and quantum wire trans- tors, high-speed digital networks, high-frequency microwave circuits, quantum cascade lasers, high-resolution terahertz spectroscopy, superlattice photo-oscillator, advanced integrated circuits, superlattice photocathodes, thermoelectric devices, superlattice coolers, thin ?lm transistors, intermediate-band solar cells, micro- tical systems, high-performanceinfrared imaging systems, bandpass ?lters, thermal sensors, optical modulators, optical switching systems, single electron/molecule electronics, nanotube based diodes, and other nanoelectronic devices.

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Zustand: Sehr gut. Zustand: Sehr gut | Seiten: 388 | Sprache: Englisch | Produktart: Bücher | This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.

Zustand: New. pp. 282.

Taschenbuch. Zustand: Neu. Heavily-Doped 2D-Quantized Structures and the Einstein Relation | Sitangshu Bhattacharya (u. a.) | Taschenbuch | xl | Englisch | 2016 | Springer International Publishing | EAN 9783319381275 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Buch. Zustand: Neu. Neuware -This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 388 pp. Englisch.

Taschenbuch. Zustand: Neu. Neuware -This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 388 pp. Englisch.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.

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Zustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.

Paperback. Zustand: Brand New. reprint edition. 388 pages. 9.25x6.10x0.88 inches. In Stock.

Taschenbuch. Zustand: Neu. Thermoelectric Power in Nanostructured Materials | Strong Magnetic Fields | Sitangshu Bhattacharya (u. a.) | Taschenbuch | xxvii | Englisch | 2012 | Springer Spektrum | EAN 9783642264160 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Buch. Zustand: Neu. Neuware -The merging of the concept of introduction of asymmetry of the wave vector space of the charge carriers in semiconductors with the modern techniques of fabric- ing nanostructured materials such as MBE, MOCVD, and FLL in one, two, and three dimensions (such as ultrathin lms, nipi structures, inversion and accumu- tion layers, quantum well superlattices, carbon nanotubes, quantum wires, quantum wire superlattices, quantumdots, magnetoinversionand accumulationlayers, qu- tum dot superlattices, etc. ) spawns not only useful quantum effect devices but also unearth new concepts in the realm of nanostructured materials science and related disciplines. It is worth remaking that these semiconductor nanostructures occupy a paramount position in the entire arena of low-dimensional science and technology by their own right and nd extensive applications in quantum registers, resonant tunneling diodes and transistors, quantum switches, quantum sensors, quantum logic gates, heterojunction eld-effect, quantum well and quantum wire trans- tors, high-speed digital networks, high-frequency microwave circuits, quantum cascade lasers, high-resolution terahertz spectroscopy, superlattice photo-oscillator, advanced integrated circuits, superlattice photocathodes, thermoelectric devices, superlattice coolers, thin lm transistors, intermediate-band solar cells, micro- tical systems, high-performanceinfrared imaging systems, bandpass lters, thermal sensors, optical modulators, optical switching systems, single electron/molecule electronics, nanotube based diodes, and other nanoelectronic devices.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 424 pp. Englisch.

Taschenbuch. Zustand: Neu. Neuware -This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 420 pp. Englisch.

Buch. Zustand: Neu. Neuware -This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 420 pp. Englisch.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is the first monograph which solely investigates the thermoelectric power in nanostructured materials under strong magnetic field (TPSM) in quantum confined nonlinear optical, III-V, II-VI, n-GaP, n-Ge, Te, Graphite, PtSb2, zerogap, II-V, Gallium Antimonide, stressed materials, Bismuth, IV-VI, lead germanium telluride, Zinc and Cadmium diphosphides, Bi2Te3, Antimony and carbon nanotubes, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization, the quantum wires and dots of the aforementioned superlattices by formulating the appropriate respective carrier energy spectra which in turn control the quantum processes in quantum effect devices. The TPSM in macro, quantum wire and quantum dot superlattices of optoelectronic materials in the presence of external photo-excitation have also been studied on the basis of newly formulated electron dispersion laws. This monograph contains 150 open research problems which form the very core and are useful for Ph. D students and researchers in the fields of materials science, solid state sciences, computational and theoretical nanoscience and technology, nanostructured thermodynamics and condensed matter physics in general in addition to the graduate courses on modern thermoelectric materials in various academic departments of many institutes and Universities.The book is written for researchers and engineers, post graduate students, professionals in the fields of materials science, nanoscience and technology, solid state sciences, nanostructured thermodynamics and condensed matter physics.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.