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Verlag: Cham, Springer., 2015
ISBN 10: 3319111876ISBN 13: 9783319111872
Anbieter: Antiquariat im Hufelandhaus GmbH vormals Lange & Springer, Berlin, Deutschland
Buch
xxxviii, 495p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Stamped. Springer Tracts in Modern Physics 262. Sprache: Englisch.
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Neu ab EUR 111,86
Gebraucht ab EUR 18,00
Mehr entdecken Hardcover
Verlag: Cham, Springer International Publishing., 2016
ISBN 10: 331920999XISBN 13: 9783319209999
Anbieter: Antiquariat im Hufelandhaus GmbH vormals Lange & Springer, Berlin, Deutschland
Buch
235 mm x 155 mm, 0 g. LV, 625 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Stamped. Slightly bumped. Springer Tracts in Modern Physics, Vol. 265. Sprache: Englisch.
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Mehr entdecken Hardcover
Verlag: Springer International Publishing, 2016
ISBN 10: 3319364669ISBN 13: 9783319364667
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.
Verlag: Springer International Publishing, 2016
ISBN 10: 331936703XISBN 13: 9783319367033
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
Verlag: Springer Berlin Heidelberg, 2014
ISBN 10: 3642445152ISBN 13: 9783642445156
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.
Verlag: Springer Berlin Heidelberg, 2014
ISBN 10: 3642438644ISBN 13: 9783642438646
Anbieter: moluna, Greven, Deutschland
Buch
Zustand: New.
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Verlag: Springer Berlin Heidelberg, 2012
ISBN 10: 3642204929ISBN 13: 9783642204920
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.
Verlag: Springer Berlin Heidelberg, 2010
ISBN 10: 3642098495ISBN 13: 9783642098499
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems.
Verlag: Springer Berlin Heidelberg, 2008
ISBN 10: 3540795561ISBN 13: 9783540795568
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems.
Verlag: Springer Berlin Heidelberg, 2012
ISBN 10: 3642312470ISBN 13: 9783642312472
Anbieter: moluna, Greven, Deutschland
Buch
Gebunden. Zustand: New.
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Verlag: Springer Nature Singapore, 2023
ISBN 10: 9811698465ISBN 13: 9789811698460
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book highlights the importance of Electron Statistics (ES), which occupies a singular position in the arena of solid state sciences, in heavily doped (HD) nanostructures by applying Heisenberg's Uncertainty Principle directly without using the complicated Density-of-States function approach as given in the literature. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, IV-VI, II-VI and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of materials in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The influence of magnetic quantization, magneto size quantization, quantum wells, wires and dots, crossed electric and quantizing fields, intense electric field, and light waves on the ES in HD quantized structures and superlattices are discussed. The content of this book finds six different applications in the arena of nano-science and nanotechnology and the various ES dependent electronic quantities, namely the effective mass, the screening length, the Einstein relation and the elastic constants have been investigated. This book is useful for researchers, engineers and professionals in the fields of Applied Sciences, solid state and materials science, nano-science and technology, condensed matter physics, and allied fields, including courses in semiconductor nanostructures.
Verlag: Springer Nature Singapore, 2022
ISBN 10: 9811698430ISBN 13: 9789811698439
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book highlights the importance of Electron Statistics (ES), which occupies a singular position in the arena of solid state sciences, in heavily doped (HD) nanostructures by applying Heisenberg's Uncertainty Principle directly without using the complicated Density-of-States function approach as given in the literature. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, IV-VI, II-VI and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of materials in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The influence of magnetic quantization, magneto size quantization, quantum wells, wires and dots, crossed electric and quantizing fields, intense electric field, and light waves on the ES in HD quantized structures and superlattices are discussed. The content of this book finds six different applications in the arena of nano-science and nanotechnology and the various ES dependent electronic quantities, namely the effective mass, the screening length, the Einstein relation and the elastic constants have been investigated. This book is useful for researchers, engineers and professionals in the fields of Applied Sciences, solid state and materials science, nano-science and technology, condensed matter physics, and allied fields, including courses in semiconductor nanostructures.
Verlag: Springer New York, 2011
ISBN 10: 146141718XISBN 13: 9781461417187
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Photoemission from Optoelectronic Materials and Their Nanostructures is the first monograph to investigate the photoemission from low-dimensional nonlinear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, bismuth, carbon nanotubes, GaSb, IV-VI, Pb1-xGexTe, graphite, Te, II-V, ZnP2, CdP2 , Bi2Te3, Sb, and IV-VI materials. The investigation leads to a discussion of III-V, II-VI, IV-VI and HgTe/CdTe quantum confined superlattices, and superlattices of optoelectronic materials. Photo-excitation changes the band structure of optoelectronic compounds in fundamental ways, which has been incorporated into the analysis of photoemission from macro- and micro-structures of these materials on the basis of newly formulated electron dispersion laws that control the studies of quantum effect devices in the presence of light. The importance of the measurement of band gap in optoelectronic materials in the presence of external photo-excitation has been discussed from this perspective. This monograph contains 125 open-ended research problems which form an integral part of the text and are useful for graduate courses on modern optoelectronics in addition to aspiring Ph.D. s and researchers in the fields of materials science, computational and theoretical nano-science and -technology, semiconductor optoelectronics, quantized-structures, semiconductor physics and condensed matter physics. In recent years, with the advent of fine line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum confinement in one, two and three dimensions (such as ultrathin films, inversion layers, accumulation layers, quantum well superlattices, quantum well wires, quantum wires superlattices, magneto-size quantizations, and quantum dots) have attracted much attention not only for their potential in uncovering new phenomena in nanoscience and technology, but also for their interesting applications in the areas of quantum effect devices. In ultrathin films, the restriction of the motion of the carriers in the direction normal to the film leads to the quantum size effect and such systems find extensive applications in quantum well lasers, field effect transistors, high speed digital networks and also in other quantum effect devices. In quantum well wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed.The available books on semiconductor science and technology cannot afford to devote even an entire chapter to photoemissions from optoelectronic materials, although its importance in photoemission spectroscopy is extremely well known. This book deals totally with the photoemission from optoelectronic materials and their nanostructures (ultrathin films, quantum wires, superlattices, etc.).
Verlag: Springer Nature Singapore, 2009
ISBN 10: 0387786058ISBN 13: 9780387786056
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Photoemission from Optoelectronic Materials and Their Nanostructures is the first monograph to investigate the photoemission from low-dimensional nonlinear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, bismuth, carbon nanotubes, GaSb, IV-VI, Pb1-xGexTe, graphite, Te, II-V, ZnP2, CdP2 , Bi2Te3, Sb, and IV-VI materials. The investigation leads to a discussion of III-V, II-VI, IV-VI and HgTe/CdTe quantum confined superlattices, and superlattices of optoelectronic materials. Photo-excitation changes the band structure of optoelectronic compounds in fundamental ways, which has been incorporated into the analysis of photoemission from macro- and micro-structures of these materials on the basis of newly formulated electron dispersion laws that control the studies of quantum effect devices in the presence of light. The importance of the measurement of band gap in optoelectronic materials in the presence of external photo-excitation has been discussed from this perspective. This monograph contains 125 open-ended research problems which form an integral part of the text and are useful for graduate courses on modern optoelectronics in addition to aspiring Ph.D. s and researchers in the fields of materials science, computational and theoretical nano-science and -technology, semiconductor optoelectronics, quantized-structures, semiconductor physics and condensed matter physics. In recent years, with the advent of fine line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum confinement in one, two and three dimensions (such as ultrathin films, inversion layers, accumulation layers, quantum well superlattices, quantum well wires, quantum wires superlattices, magneto-size quantizations, and quantum dots) have attracted much attention not only for their potential in uncovering new phenomena in nanoscience and technology, but also for their interesting applications in the areas of quantum effect devices. In ultrathin films, the restriction of the motion of the carriers in the direction normal to the film leads to the quantum size effect and such systems find extensive applications in quantum well lasers, field effect transistors, high speed digital networks and also in other quantum effect devices. In quantum well wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed.The available books on semiconductor science and technology cannot afford to devote even an entire chapter to photoemissions from optoelectronic materials, although its importance in photoemission spectroscopy is extremely well known. This book deals totally with the photoemission from optoelectronic materials and their nanostructures (ultrathin films, quantum wires, superlattices, etc.).
Verlag: De Gruyter, 2018
ISBN 10: 3110609223ISBN 13: 9783110609226
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The work studies under different physical conditions the carrier contribution to elastic constants in heavily doped optoelectronic materials. In the presence of intense photon field the authors apply the Heisenberg Uncertainty Principle to formulate electron statistics. Many open research problems are discussed and numerous potential applications as quantum sensors and quantum cascade lasers are presented.
Verlag: De Gruyter, 2020
ISBN 10: 3110659727ISBN 13: 9783110659726
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This monograph investigates the entropy in heavily doped (HD) quantized structures by analyzing under the influence of magnetic quantization, crossed electric and quantizing fields the range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces. Finally the authors address various challenges in today's research of optoelectronic materials and give an outlook to future studies.
Verlag: Springer International Publishing, 2016
ISBN 10: 3319343505ISBN 13: 9783319343501
Anbieter: moluna, Greven, Deutschland
Buch
Zustand: New.
Verlag: Springer International Publishing, 2013
ISBN 10: 3319013386ISBN 13: 9783319013381
Anbieter: moluna, Greven, Deutschland
Buch
Gebunden. Zustand: New.