ITOH, KIYOO (23 Ergebnisse)

Zustand: New. pp. 360 290 Illus.

Zustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher.

Zustand: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.

Zustand: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,900grams, ISBN:9783540678205.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors' long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.

Zustand: New. In.

Zustand: New. In.

Buch. Zustand: Neu. Neuware -Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 360 pp. Englisch.

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs.

Paperback. Zustand: Brand New. 400 pages. 9.25x6.10x0.82 inches. In Stock.

Zustand: New. In.

Hardcover. Zustand: Very Good. Integrated Circuits And Systems; - Great overall condition. Minor cosmetic wear. No noteworthy blemishes. No writing.; - We're committed to your satisfaction. We offer free returns and respond promptly to all inquiries. Your item will be carefully wrapped in bubble wrap and securely boxed. All orders ship on the same or next business day. Buy with confidence.

Paperback. Zustand: Brand New. 228 pages. 9.25x6.10x0.52 inches. In Stock.

Zustand: New. In.

Taschenbuch. Zustand: Neu. Neuware -The VLSI memory era truly began when the first production of semiconduc tor memory was announced by IBM and Intel in 1970. The announcement had a profound impact on my research at Hitachi Ltd. , and I was forced to change fields: from magnetic thin film to semiconductor memory. This change was so exceptionally sudden and difficult, I feIt like a victim of fate. Looking back, however, I realize how fortunate I was. I have witnessed an unprecedented increase in memory capacity (DRAM, for example, has had a 6-order increase in the last three decades - from the 1-Kb level in 1970 to the 1-Gb level today). I have contributed to this progress with full involvement in memory-chip development over my career. Such rapid progress would have been impossible without many of the inventions and innovative technologies, and without the effort of many talented people. Unfortunately, few systematic books on memory-chip design have been written by experts. Tliis is a result of two factors: the difficulty of involving university professors because of rapidly changing technology requiring huge investments and development resources, and a shortage of time on the part of chip designers in industry due to severe competition in the memory-chip business. Therefore, LSI memory-chip design has been isolated from the outside, preventing a deeper understanding of the technology. This book is based on my 30-year memory-chip (particularly DRAM) design career.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 508 pp. Englisch.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The VLSI memory era truly began when the first production of semiconduc tor memory was announced by IBM and Intel in 1970. The announcement had a profound impact on my research at Hitachi Ltd. , and I was forced to change fields: from magnetic thin film to semiconductor memory. This change was so exceptionally sudden and difficult, I feIt like a victim of fate. Looking back, however, I realize how fortunate I was. I have witnessed an unprecedented increase in memory capacity (DRAM, for example, has had a 6-order increase in the last three decades - from the 1-Kb level in 1970 to the 1-Gb level today). I have contributed to this progress with full involvement in memory-chip development over my career. Such rapid progress would have been impossible without many of the inventions and innovative technologies, and without the effort of many talented people. Unfortunately, few systematic books on memory-chip design have been written by experts. Tliis is a result of two factors: the difficulty of involving university professors because of rapidly changing technology requiring huge investments and development resources, and a shortage of time on the part of chip designers in industry due to severe competition in the memory-chip business. Therefore, LSI memory-chip design has been isolated from the outside, preventing a deeper understanding of the technology. This book is based on my 30-year memory-chip (particularly DRAM) design career.

Hardcover. Zustand: Brand New. 1st edition. 346 pages. 9.25x6.50x1.00 inches. In Stock.

Zustand: New. In.

Gebunden. Zustand: New. This book is based on the author s 30-year design career in industryIt includes more than 400 figuresA systematic description of microelectronic device design. Topics range from the basics to low-power and ultralow-voltage designs, subthreshold c.

Buch. Zustand: Neu. Neuware - The VLSI memory era truly began when the first production of semiconduc tor memory was announced by IBM and Intel in 1970. The announcement had a profound impact on my research at Hitachi Ltd. , and I was forced to change fields: from magnetic thin film to semiconductor memory. This change was so exceptionally sudden and difficult, I feIt like a victim of fate. Looking back, however, I realize how fortunate I was. I have witnessed an unprecedented increase in memory capacity (DRAM, for example, has had a 6-order increase in the last three decades - from the 1-Kb level in 1970 to the 1-Gb level today). I have contributed to this progress with full involvement in memory-chip development over my career. Such rapid progress would have been impossible without many of the inventions and innovative technologies, and without the effort of many talented people. Unfortunately, few systematic books on memory-chip design have been written by experts. Tliis is a result of two factors: the difficulty of involving university professors because of rapidly changing technology requiring huge investments and development resources, and a shortage of time on the part of chip designers in industry due to severe competition in the memory-chip business. Therefore, LSI memory-chip design has been isolated from the outside, preventing a deeper understanding of the technology. This book is based on my 30-year memory-chip (particularly DRAM) design career.