B jayant baliga (60 Ergebnisse)

Hardcover. Zustand: Good. No Jacket. Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, Spend Less.

Hardcover. Zustand: Fair. The item might be beaten up but readable. May contain markings or highlighting, as well as stains, bent corners, or any other major defect, but the text is not obscured in any way.

hardcover. Zustand: Good. Most items will be dispatched the same or the next working day. A copy that has been read but remains in clean condition. All of the pages are intact and the cover is intact and the spine may show signs of wear. The book may have minor markings which are not specifically mentioned.…

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

PAP. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: New. In English.

Paperback. Zustand: Brand New. 528 pages. 8.75x6.00x1.25 inches. In Stock.

Paperback. Zustand: Brand New. 336 pages. 9.25x6.25x0.76 inches. In Stock.

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: New. In English.

Zustand: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition. Dust jacket in good condition. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,850grams, ISBN:0471819867.…

Zustand: New. In English.

Zustand: New.

Gebunden. Zustand: New.

Zustand: New. In English.

Zustand: New. Idioma/Language: Inglés. Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community. *** Nota: Los envíos a España peninsular, Baleares y Canarias se realizan a través de mensajería urgente. No aceptamos pedidos con destino a Ceuta y Melilla.…

Zustand: New. In English.

Zustand: New. A comprehensive resource of power device electrical characteristics in a cryogenic environment. It presents the different characteristics of power devices operated below -55 C (220K). It provides data and physics based models for power devices operated at temperatures down to 77K for the first time within a single source. Series: Power Electronics and Power Systems. Num Pages: 166 pages, biography. BIC Classification: TH; TJFD5. Category: (P) Professional & Vocational; (XV) Technical / Manuals. Dimension: 234 x 156 x 11. Weight in Grams: 930. . 1998. Hardback. . . . . Books ship from the US and Ireland.…

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The BaSIC topology is a revolutionary method for controlling power semiconductor devices. It enables monitoring the current flow through the devices while providing a unique current limiting capability that enhances their short-circuit withstand capability. The book describes the BaSIC topology concept and contrasts it with previous approaches. It provides an extensive description of the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices. The ability to extend the short-circuit withstand time to over 10 ms for SiC power MOSFETs has been achieved for the first time with the BaSIC topology. The BaSIC topology is the only approach shown to eliminate the failure of these devices under repetitive short-circuit events. The sensing of current in paralleled devices is demonstrated, eliminating the need for external sensors. The BaSIC topology has utility for various power electronics applications, including electric vehicles and industrial motor drives.Introduces the BaSIC topology a revolutionary new approach for the control of power devices;Describes the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices;Written by the inventor of the insulated-gate bipolar transistor (IGBT) and the BaSIC topology concept.…

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The BaSIC topology is a revolutionary method for controlling power semiconductor devices. It enables monitoring the current flow through the devices while providing a unique current limiting capability that enhances their short-circuit withstand capability. The book describes the BaSIC topology concept and contrasts it with previous approaches. It provides an extensive description of the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices. The ability to extend the short-circuit withstand time to over 10 ms for SiC power MOSFETs has been achieved for the first time with the BaSIC topology. The BaSIC topology is the only approach shown to eliminate the failure of these devices under repetitive short-circuit events. The sensing of current in paralleled devices is demonstrated, eliminating the need for external sensors. The BaSIC topology has utility for various power electronics applications, including electric vehicles and industrial motor drives.Introduces the BaSIC topology a revolutionary new approach for the control of power devices;Describes the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices;Written by the inventor of the insulated-gate bipolar transistor (IGBT) and the BaSIC topology concept.…

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: Good. : Este libro explora los conceptos avanzados de los MOSFET de potencia, abarcando desde los fundamentos hasta las aplicaciones más complejas. Escrito por B. Jayant Baliga, profundiza en los semiconductores de óxido metálico y su aplicación en la ingeniería eléctrica, especialmente en transistores. Ideal para estudiantes y profesionales del campo. EAN: 9781489993878 Tipo: Libros Categoría: Tecnología Título: Advanced Power MOSFET Concepts Autor: B. Jayant Baliga Idioma: en Páginas: 578 Formato: tapa dura Año de publicación: 2014.…

Taschenbuch. Zustand: Neu. The BaSIC Topology | A Revolutionary Power Device Control Strategy | B. Jayant Baliga (u. a.) | Taschenbuch | xxii | Englisch | 2026 | Springer | EAN 9783031866326 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.…

Zustand: New. In English.

Hardcover. Zustand: Sehr gut. Gebraucht - Sehr gut - ungelesen,als Mängelexemplar gekennzeichnet, mit leichten Mängeln an Schnitt oder Einband durch Lager- oder Transportschaden -Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.Libri GmbH, Europaallee 1, 36244 Bad Hersfeld 672 pp. Englisch.…

HRD. Zustand: New. New Book. Shipped from UK. Established seller since 2000.

Zustand: NEW.

Hardcover. Zustand: Brand New. 400 pages. 9.25x6.10x9.21 inches. In Stock.