Surface Engineering: Surface Modification of Materials (NATO Science Series E:)

ISBN 10: 9400962185 ISBN 13: 9789400962187
Verlag: Springer, 2011
Neu Softcover

Verkäufer Ria Christie Collections, Uxbridge, Vereinigtes Königreich Verkäuferbewertung 5 von 5 Sternen 5 Sterne, Erfahren Sie mehr über Verkäufer-Bewertungen

AbeBooks-Verkäufer seit 25. März 2015


Beschreibung

Beschreibung:

In. Bestandsnummer des Verkäufers ria9789400962187_new

Diesen Artikel melden

Inhaltsangabe:

Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi­ gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para­ meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.

Reseña del editor: Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi­ gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para­ meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.

„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.

Bibliografische Details

Titel: Surface Engineering: Surface Modification of...
Verlag: Springer
Erscheinungsdatum: 2011
Einband: Softcover
Zustand: New

Beste Suchergebnisse beim ZVAB

Foto des Verkäufers

S. C. Singhal
ISBN 10: 9400962185 ISBN 13: 9789400962187
Neu Taschenbuch

Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland

Verkäuferbewertung 5 von 5 Sternen 5 Sterne, Erfahren Sie mehr über Verkäufer-Bewertungen

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution. Artikel-Nr. 9789400962187

Verkäufer kontaktieren

Neu kaufen

EUR 551,29
Versand: EUR 65,80
Von Deutschland nach USA

Anzahl: 1 verfügbar

In den Warenkorb

Beispielbild für diese ISBN

Kossowsky, R. (Editor) / Singhal, S.C. (Editor)
ISBN 10: 9400962185 ISBN 13: 9789400962187
Neu Paperback

Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich

Verkäuferbewertung 5 von 5 Sternen 5 Sterne, Erfahren Sie mehr über Verkäufer-Bewertungen

Paperback. Zustand: Brand New. 780 pages. 9.25x6.10x1.76 inches. In Stock. Artikel-Nr. x-9400962185

Verkäufer kontaktieren

Neu kaufen

EUR 747,45
Versand: EUR 16,99
Von Vereinigtes Königreich nach USA

Anzahl: 2 verfügbar

In den Warenkorb