Neuware - Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph.

Bestandsnummer des Verk�ufers 9780387280028

Verk�ufer kontaktieren

Diesen Artikel melden

Bibliografische Details

Titel: Nanoscale Transistors : Device Physics, Modeling and Simulation
Verlag: Springer Us Dez 2005
Erscheinungsjahr: 2005
Sprache: Englisch
ISBN-10: 0387280022
ISBN-13: 9780387280028
Einband: Buch
Zustand: Neu
Abmessungen: Breite: 242 mm, H�he: 165 mm, Tiefe: 18 mm
Gewicht: 485 Gramm

�ber diesen Titel

Inhaltsangabe

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

�ber die Autorin bzw. den Autor

Mark S. Lundstrom is the Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University where he also directs the NSF Network for Computational Nanotechnology. His current research interests center on the physics of semiconductor devices, especially nanoscale transistors. His previous work includes studies of heterostructure devices, solar cells, heterojunction bipolar transistors and semiconductor lasers. During the course of his Purdue career, Lundstrom has served as director of the Optoelectronics Research Center and assistant dean of the Schools of Engineering. He is a fellow of both the Institute of Electrical and Electronic Engineers (IEEE) and the American Physical Society and the recipient of several awards for teaching and research ― most recently the 2002 IEEE Cledo Brunetti Award and the 2002 Semiconductor Research Corporation Technical Achievement Award for his work with his colleague, S. Datta, on nanoscale electronics.

Jing Guo is an assistant professor of Electrical and Computer Engineering at University of Florida, Gainesville. His has worked on the theory, modeling and simulation of a variety of nanotransistors, including silicon nanotransistors, carbon nanotube transistors, and single electron transistors, in close collaboration with experimentalists. His current research interests focus on modeling and simulation of nanoscale devices, carbon nanotube electronics and optoelectronics, quantum transport, physics of nanoscale transistors, and parallel computation.

��ber diesen Titel� kann sich auf eine andere Ausgabe dieses Titels beziehen.

Anbieterinformationen

Das Unternehmen AHA-BUCH GmbH: Seit der Gr�ndung von AHA-BUCH im Juli 2005 ist unser Hauptziel, zufriedenen Kunden so schnell und so preisg�nstig wie m�glich ihren B�cherwunsch zu erf�llen. Unsere Firma besch�ftigt 16 Mitarbeiter, die nur ein Ziel kennen: den Kunden und seine W�nsche! Auf �ber 3700 m2 Fl�che haben wir �ber 100.000 B�cher, Modernes Antiquariat und Spiele auf Lager.

Zur Homepage des Verk�ufers

Unternehmensdaten des Verk�ufers

AHA-BUCH GmbH
Garlebsen 48, Einbeck, 37574, Germany

Gesch�ftsbedingungen und Versandinformationen

Verkaufsbedingungen

Allgemeine Gesch�ftsbedingungen und Kundeninformationen / Datenschutzerkl�rung

I. Allgemeine Gesch�ftsbedingungen

� 1 Grundlegende Bestimmungen

(1) Die nachstehenden Gesch�ftsbedingungen gelten f�r alle Vertr�ge, die Sie mit uns als Anbieter (AHA-BUCH GmbH) �ber die Internetplattformen AbeBooks und/oder ZVAB schlie�en. Soweit nicht anders vereinbart, wird der Einbeziehung gegebenenfalls von Ihnen verwendeter eigener Bedingungen widersprochen.

(2) Verbraucher im Sinne der nachstehenden Regelungen...

Mehr Information

Widerrufsbelehrung

Versandbedingungen

Wir liefern Lagerartikel innerhalb von 24 Stunden nach Erhalt der Bestellung aus.
Barsortimentsartikel, die wir �ber Nacht geliefert bekommen, am darauffolgenden Werktag.
Unser Ziel ist es Ihnen die Artikel in der �konomischten und effizientesten Weise zu senden.

Versandkosten innerhalb von Deutschland

Versandkosten innerhalb von Deutschland
Bestellmenge	1 bis 2�Werktage	1 bis 2�Werktage
Erster Artikel	EUR 0.00	EUR 4.50

Die Versandzeiten werden von den Verk�uferinnen und Verk�ufern festgelegt. Sie variieren je nach Versanddienstleister und Standort. Sendungen, die den Zoll passieren, k�nnen Verz�gerungen unterliegen. Eventuell anfallende Abgaben oder Geb�hren sind von der K�uferin bzw. dem K�ufer zu tragen. Die Verk�uferin bzw. der Verk�ufer kann Sie bez�glich zus�tzlicher Versandkosten kontaktieren, um einen m�glichen Anstieg der Versandkosten f�r Ihre Artikel auszugleichen.

Impressum & Info zum Verk�ufer