Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates
N/A
ISBN 10: 0792336798 ISBN 13: 9780792336792
Verlag: Springer, 1995
Neu
Hardcover
Verkäufer
Kennys Bookstore, Olney, MD, USA
Verkäuferbewertung 5 von 5 Sternen
AbeBooks-Verkäufer seit 9. Oktober 2009
Dieser Artikel ist nicht mehr verfügbar.
Beschreibung
Beschreibung:
1995. Hardcover. . . . . . Books ship from the US and Ireland. Bestandsnummer des Verkäufers V9780792336792
Inhaltsangabe:
Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching.
During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process.
The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates.
The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.
Reseña del editor: Proceedings of the NATO Advanced Research Workshop, Ringberg in Rottach Egern, Germany, February 20--24, 1995
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
Bibliografische Details
Titel: Low Dimensional Structures Prepared by ...
Verlag: Springer
Erscheinungsdatum: 1995
Einband: Hardcover
Zustand: New
Beste Suchergebnisse beim ZVAB
Beispielbild für diese ISBN
Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates (Nato Science Series E:)
Anbieter: Zubal-Books, Since 1961, Cleveland, OH, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: New. 386 pp., Hardcover, new. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country. Artikel-Nr. ZB1137373
Anzahl: 1 verfügbar
Foto des Verkäufers
Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates
Verlag:
Springer Netherlands, Springer Netherlands Aug 1995, 1995
ISBN 10: 0792336798
ISBN 13: 9780792336792
Neu
Hardcover
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Buch. Zustand: Neu. Neuware -Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching.During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process.The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates.The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 402 pp. Englisch. Artikel-Nr. 9780792336792
Anzahl: 2 verfügbar
Beispielbild für diese ISBN
Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates (NATO Science Series E:, 298)
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
Zustand: New. In. Artikel-Nr. ria9780792336792_new
Anzahl: Mehr als 20 verfügbar
Foto des Verkäufers
Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates
Verlag:
Springer Netherlands, Springer Netherlands, 1995
ISBN 10: 0792336798
ISBN 13: 9780792336792
Neu
Hardcover
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Significant experimental work is devoted to the preparation of one and zero dimensional semiconductor structures in view of future electronic and optical devices which involve quantum effects. The aim is good control in the realisation of nanometer structures both in vertical and lateral direction. Conventional processing techniques based on lithography face inherent problems such as limited resolution and surface defects caused by reactive ion etching. During the last few years several research groups started working on direct syntheses of semiconductor nanostructures by combining epitaxial growth techniques such as molecular beam epitaxy and chemical vapour deposition with pre patterning of the substrate wafers. Another idea is based on island formation in strained layer heteroepitaxy. Zero and one dimensional structures with dimensions down to a few atomic distances have been realised this way. An important point is that the size of the quantum structures is controlled within the epitaxial deposition in a self-adjusting process. The main subjects of the book are: Theoretical aspects of epitaxial growth, selfassembling nanostructures and cluster formation, epitaxial growth in tilted and non-(001) surfaces, cleaved edge overgrowth, nanostructure growth on patterned silicon substrates, nanostructures prepared by selective area epitaxy or growth on patterned substrates, in-situ etching and device applications based on epitaxial regrowth on patterned substrates. The experimental work mainly concentrated on GaAs/A1GaAs, GaAs/InGaAs, InGaP/InP and Si/SiGe based semiconductor heterostructures. Growth related problems received special attention. The different concepts for preparation of low dimensional structures are presented to allow direct comparison and to identify new concepts for future research work. Artikel-Nr. 9780792336792
Anzahl: 1 verfügbar