Advanced Physical Models for Silicon Device Simulation (Computational Microelectronics)
Schenk, Andreas
ISBN 10: 3709173345 ISBN 13: 9783709173343
Verlag: Springer, 2012
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Softcover
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From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
Críticas: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field who wants to know what can and cannot be done, and a useful source of reference for experienced users ...” Microelectronics Journal
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Titel: Advanced Physical Models for Silicon Device ...
Verlag: Springer
Erscheinungsdatum: 2012
Einband: Softcover
Zustand: New
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Advanced Physical Models for Silicon Device Simulation
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Taschenbuch. Zustand: Neu. Advanced Physical Models for Silicon Device Simulation | Andreas Schenk | Taschenbuch | xviii | Englisch | 2012 | Springer | EAN 9783709173343 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. Artikel-Nr. 106020265
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Advanced Physical Models for Silicon Device Simulation
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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of 'taylored quantum-mechanics'. Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from 'first principles' and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems. Artikel-Nr. 9783709173343
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Advanced Physical Models for Silicon Device Simulation (Computational Microelectronics)
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Paperback. Zustand: Brand New. 367 pages. 9.61x6.69x0.85 inches. In Stock. Artikel-Nr. x-3709173345
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