Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond - Softcover

Inhaltsangabe

Introduction.- Strain technology of Si-based materials.- SiGe Epitaxial Growth and material characterization.- SiGe Source and Drain Integration and transistor performance investigation.- Pattern Dependency behavior of SiGe Selective Epitaxy.- Summary and final words.

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