Verwandte Artikel zu Ti-Sb-Te Phase Change Materials: Component Optimisation,...

Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications (Springer Theses) - Hardcover

Buch 280 von 797: Springer Theses

Zhu, Min

 
9789811043819: Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications (Springer Theses)
Hardcover
ISBN 10: 9811043817 ISBN 13: 9789811043819
Verlag: Springer, 2017

Inhaltsangabe

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.

Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.

Über die Autorin bzw. den Autor

Min Zhu received his B.Sc. in Electronics Science and Technology from Hubei University, China in 2009, and completed his Ph.D. in Microelectronics and Solid-State Electronics at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2014. His major research project in Prof. Zhitang Song’s group concerned a Ti-Sb-Te alloy for high-speed and low-power phase change memory. Subsequently, he received an Alexander von Humboldt Research Fellowship and became a post-doctoral fellow working with Prof. Matthias Wuttig at RWTH Aachen University, investigating the crystallization behavior of phase change materials.

Von der hinteren Coverseite

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.

„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.

Verlag
Springer
Erscheinungsdatum
2017
Sprache
Englisch
ISBN 10 
9811043817
ISBN 13 
9789811043819
Einband
Gebundene Ausgabe
Auflage
1
Anzahl der Seiten
140
Kontakt zum Hersteller
Springer Nature Customer Service Center GmbH
ProductSafety@springernature.com

Tiergartenstr. 17
Heidelberg
69121
Deutschland