Verwandte Artikel zu Semiconductor Interfaces at the Sub-Nanometer Scale:...

Semiconductor Interfaces at the Sub-Nanometer Scale: 243 (NATO Science Series E:) - Softcover

 
9789401049009: Semiconductor Interfaces at the Sub-Nanometer Scale: 243 (NATO Science Series E:)

Inhaltsangabe

The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.

Reseña del editor

The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Reseña del editor

This book comprises review papers by leading scientists in the fields of semiconductor growth, analysis and device structures. In particular, it contains reviews of the state-of-the-art in the following topics:
(a) theoretical and experimental treatment of epitaxial growth;
(b) electronic bandstructure on the atomic to nanometer scale in semiconductor interfaces;
(c) analysis of semiconductor interfaces and superlattices by photo electrospectroscopy, HRTEM and STM;
(d) discussion of relevant properties and criteria in Group IV and III--V devices.
All the reviews place an emphasis on the relevant properties on the atomic to nanometer scale as this is extremely important for superlattice structures and devices.
For those working in semiconductor superlattices, MBE and ultra-thin-layer (quantum) phenomena: the book provides a state of the art review and extensive reference to recent work.

„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.

Gratis für den Versand innerhalb von/der Deutschland

Versandziele, Kosten & Dauer

Weitere beliebte Ausgaben desselben Titels

9780792323976: Semiconductor Interfaces at the Sub-Nanometer Scale: 243 (NATO Science Series E:)

Vorgestellte Ausgabe

ISBN 10:  0792323971 ISBN 13:  9780792323976
Verlag: Springer, 1993
Hardcover

Suchergebnisse für Semiconductor Interfaces at the Sub-Nanometer Scale:...

Foto des Verkäufers

M. D. Pashley
ISBN 10: 9401049009 ISBN 13: 9789401049009
Neu Taschenbuch

Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland

Verkäuferbewertung 5 von 5 Sternen 5 Sterne, Erfahren Sie mehr über Verkäufer-Bewertungen

Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling. Artikel-Nr. 9789401049009

Verkäufer kontaktieren

Neu kaufen

EUR 221,53
Währung umrechnen
Versand: Gratis
Innerhalb Deutschlands
Versandziele, Kosten & Dauer

Anzahl: 1 verfügbar

In den Warenkorb

Beispielbild für diese ISBN

Verlag: Springer, 2012
ISBN 10: 9401049009 ISBN 13: 9789401049009
Neu Softcover

Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich

Verkäuferbewertung 5 von 5 Sternen 5 Sterne, Erfahren Sie mehr über Verkäufer-Bewertungen

Zustand: New. In. Artikel-Nr. ria9789401049009_new

Verkäufer kontaktieren

Neu kaufen

EUR 228,17
Währung umrechnen
Versand: EUR 5,77
Von Vereinigtes Königreich nach Deutschland
Versandziele, Kosten & Dauer

Anzahl: Mehr als 20 verfügbar

In den Warenkorb

Beispielbild für diese ISBN

Salemink, H. W. M. (Editor)/ Pashley, M. D. (Editor)
Verlag: Springer Verlag, 2013
ISBN 10: 9401049009 ISBN 13: 9789401049009
Neu Paperback

Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich

Verkäuferbewertung 5 von 5 Sternen 5 Sterne, Erfahren Sie mehr über Verkäufer-Bewertungen

Paperback. Zustand: Brand New. 272 pages. 9.25x6.10x0.62 inches. In Stock. Artikel-Nr. x-9401049009

Verkäufer kontaktieren

Neu kaufen

EUR 296,60
Währung umrechnen
Versand: EUR 11,58
Von Vereinigtes Königreich nach Deutschland
Versandziele, Kosten & Dauer

Anzahl: 2 verfügbar

In den Warenkorb