Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications - Softcover

Franco, Jacopo; Kaczer, Ben; Groeseneken, Guido

 
9789400776647: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Zu dieser ISBN ist aktuell kein Angebot verfügbar.

Inhaltsangabe

Chapter 1: Introduction. 1.1 CMOS scaling: evolutionary era. 1.2 CMOS scaling: revolutionary era. 1.3 High mobility channels for future CMOS technology nodes. 1.4 Reliability limitations. 1.5 Variability issues. 1.6 Objectives and structure of this work. 1.7 Summary of this Chapter. References.

Chapter 2: Degradation mechanisms. 2.1 Introduction. 2.2 Negative Bias Temperature Instability (NBTI). 2.3 Hot Carriers. 2.4 Time Dependent Dielectric Breakdown. 2.5 Summary of this Chapter. References.

Chapter 3: Techniques and devices. 3.1 Introduction. 3.2 Advanced NBTI measurement techniques. 3.3 Techniques and methodologies used in this work. 3.4 Devices used in this work. 3.5 Structures used in this work. 3.6 Summary of this Chapter. References.

Chapter 4: Negative Bias Temperature Instability in (Si)Ge pMOSFETs. 4.1 Introduction. 4.2 Impact of the individual gate stack parameters. 4.3 Gate stack optimization: demonstrating sufficient NBTI reliability at UT-EOT. 4.4 Process- and architecture-independent results. 4.5 Detailed discussion of the experimental results. 4.6 Body Bias and NBTI. 4.7 Model. 4.8 Final considerations: performance vs. reliability. 4.9 Summary of this Chapter. References.

Chapter 5: Negative Bias Temperature Instability in nanoscale devices. 5.1 Introduction. 5.2 NBTI on nanoscale SiGe devices. 5.3 Implications for the time-dependent variability. 5.4 Model. 5.5 Impact of Single Charged Gate Oxide Defects: Area scaling. 5.6 Impact of single charged gate oxide defects on the entire FET current characteristics: VG-dependence. 5.7 Impact of single charged gate oxide defects:body bias dependence. 5.8 Summary of this Chapter. References.

Chapter 6: Channel Hot Carriers and other reliability mechanisms. 6.1 Introduction. 6.2 Experimental methodology for studying the interplay of CHC and NBTI. 6.3 Interaction of CHC and NBTI in pMOSFETs. 6.4 CHC in SiGe pMOSFETs. 6.5 CHC in Ge pMOSFETs. 6.6 Other reliability mechanisms. 6.7 Summary of this Chapter. References.

Chapter 7: Conclusions and perspectives. 7.1 Conclusions. 7.2 Perspectives.

Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.

Weitere beliebte Ausgaben desselben Titels

9789400776623: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications: 47 (Springer Series in Advanced Microelectronics)

Vorgestellte Ausgabe

ISBN 10:  9400776624 ISBN 13:  9789400776623
Verlag: Springer, 2013
Hardcover