Inhaltsangabe
This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.
Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.
Reseña del editor
This fifth volume in the series covering results in the field of defects and diffusion in semiconductors includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes such as: tracer diffusion in a concentrated lattice gas; defect luminescence in layered chalcogenide semiconductors; defect formation after laser thermal processing; redistribution of point defects in an inhomogeneous temperature field; and very general mathematical techniques for determining basic diffusion parameters. Altogether, these 13 invited papers and 802 selected abstracts should provide a useful guide and insight into thinking in semiconductor theory and technology.
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
Suchergebnisse für Defects and Diffusion in Semiconductors V: Volumes...
Beispielbild für diese ISBN
Defects and Diffusion in Semiconductors; an Annual Retrospective V.
Anbieter: Richard Booth's Bookshop, Hereford, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
PaperBack. Zustand: Good. No Jacket. 449pp. ill. Good copy, front cover has been creased.Defect and Diffusion Forum. Volumes 210212 2002.This fifth volume in the series covering results in the field of defects and diffusion in semiconductors includes abstracts of papers which appeared within the approximate period of mid2001 to mid2002. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the Defects and Diffusion in Ceramics series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and 113 defects in silicon; defect states in InAs quantum dots and defect generation at ZnSeGaAs interfaces. There are also papers treating a wide range of general themes such as: tracer diffusion in a concentrated lattice gas; defect luminescence in layered chalcogenide semiconductors; defect formation after laser thermal processing; redistribution of point defects in an inhomogeneous temperature field; and very general mathematical techniques for determining basic diffusion parameters. Altogether, these 13 invited papers and 802 selected abstracts should provide a useful guide and insight into thinking in semiconductor theory and technology. Artikel-Nr. 100074203
Gebraucht kaufen
EUR 25,72
Versand:
EUR 36,33
Von Vereinigtes Königreich nach USA
Anzahl: 1 verfügbar