Inhaltsangabe
The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide growing bulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesis’s, 500 articles and conference thesis’s in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov.
Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.
Reseña del editor
The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide growing bulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesis’s, 500 articles and conference thesis’s in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov.
Biografía del autor
Prof. Yu.M. Tairov has worked in the field of SiC growth, characterization and device fabrication for more than 50 years. The modified method of sublimation growth - Modified-Lely method - was elaborated under direct of Prof. Yu.M. Tairov at the St.Petersburg Electrotechnical University in 1976 and successfully employed for bulk crystal growth.
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
Suchergebnisse für The main defects of silicon carbide ingots and epitaxial...
Beispielbild für diese ISBN
The main defects of silicon carbide ingots and epitaxial layers: Topical review
Verlag:
LAP LAMBERT Academic Publishing, 2016
ISBN 10: 3659836214
ISBN 13: 9783659836213
Neu
Paperback
Anbieter: Revaluation Books, Exeter, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
Paperback. Zustand: Brand New. 80 pages. 8.66x5.98x0.71 inches. In Stock. Artikel-Nr. 3659836214
Neu kaufen
EUR 45,81
Versand:
EUR 11,38
Von Vereinigtes Königreich nach USA
Anzahl: 1 verfügbar
Foto des Verkäufers
The main defects of silicon carbide ingots and epitaxial layers
Verlag:
LAP Lambert Academic Publishing Feb 2016, 2016
ISBN 10: 3659836214
ISBN 13: 9783659836213
Neu
Taschenbuch
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. Neuware -The work was done in oldest electrotechnical university of Europe - at the Saint Petersburg State Electrotechnical University at the Department of Micro- and Nanoelectronics. Where first of the world a method of silicon carbide growing bulk single crystals was developed in 1976. The method is now used in many laboratories and firms all over the world for sublimation growth of the SiC boules. More than 50 PhD thesis¿s, 500 articles and conference thesis¿s in the field of SiC crystals and epitaxial layers growth and characterization, devices fabrication have been prepared at the Department of Microelectronics under lead of Prof. Yu.M. Tairov.Books on Demand GmbH, Überseering 33, 22297 Hamburg 80 pp. Englisch. Artikel-Nr. 9783659836213
Neu kaufen
EUR 23,90
Versand:
EUR 60,00
Von Deutschland nach USA
Anzahl: 2 verfügbar