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Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS‐SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano‐openingarray ‐patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.
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Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS-SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano-openingarray -patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.
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Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), printed single-sided, grade: -, University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS-SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano-openingarray -patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.
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- VerlagGRIN Publishing
- Erscheinungsdatum2011
- ISBN 10 3656083169
- ISBN 13 9783656083160
- EinbandTapa blanda
- SpracheEnglisch
- Auflage2
- Anzahl der Seiten36
- Kontakt zum HerstellerNicht verfügbar
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Electron Beam Lithography Process Optimization : An Experimental Design Study
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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS-SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano-openingarray -patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior. Artikel-Nr. 9783656083160
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