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Molecular Beam Epitaxy: Fundamentals and Current Status: 7 (Springer Series in Materials Science) - Softcover
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Book by Herman Marian A Sitter Helmut
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Since a molecular-beam apparatus was first successfully used by Cho and Arthur in the late 1960s to crystallize and investigate GaAs epilayers, high vacuum epitaxial growth techniques using particle beams have developed rapidly. This development accelerated when different semiconductor devices with quantum- well structures were invented in the 1970s. The important implementation of these structures in devices like quantum-well lasers, high electron mobility tran- sistors or superlattice avalanche photodiodes gave added impetus to research work and to increasing production aims. Coincident with this development, orig- inal research papers and reviews devoted to problems concerning these growth techniques have also rapidly grown in number, and in addition they have become very disversified. At present several hundred original papers on this subject ap- pear in the literature each year. However, in contrast to this there is a lack of comprehensive monographs comprising the whole variety of problems related to epitaxial growth of semiconductor films from atomic and molecular beams. This book, which presents a review of the state of the art of molecular beam epitaxy (MBE), as applied to the growth of semiconductor films and multilayer structures, may serve the reader as a convenient general guide to the topics related to this crystallization technique.
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This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
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- VerlagSpringer Berlin Heidelberg
- Erscheinungsdatum1989
- ISBN 10 3642971008
- ISBN 13 9783642971006
- EinbandTapa blanda
- Anzahl der Seiten396
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Molecular Beam Epitaxy : Fundamentals and Current Status
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Springer Berlin Heidelberg
(2012)
ISBN 10: 3642971008
ISBN 13: 9783642971006
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Buchbeschreibung Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Since a molecular-beam apparatus was first successfully used by Cho and Arthur in the late 1960s to crystallize and investigate GaAs epilayers, high vacuum epitaxial growth techniques using particle beams have developed rapidly. This development accelerated when different semiconductor devices with quantum well structures were invented in the 1970s. The important implementation of these structures in devices like quantum-well lasers, high electron mobility tran sistors or superlattice avalanche photodiodes gave added impetus to research work and to increasing production aims. Coincident with this development, orig inal research papers and reviews devoted to problems concerning these growth techniques have also rapidly grown in number, and in addition they have become very disversified. At present several hundred original papers on this subject ap pear in the literature each year. However, in contrast to this there is a lack of comprehensive monographs comprising the whole variety of problems related to epitaxial growth of semiconductor films from atomic and molecular beams. This book, which presents a review of the state of the art of molecular beam epitaxy (MBE), as applied to the growth of semiconductor films and multilayer structures, may serve the reader as a convenient general guide to the topics related to this crystallization technique. Artikel-Nr. 9783642971006
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