Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
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Udo W. Pohl received the B.S. degree (German pre-degree) from the Technical University of Aachen, Aachen, Germany, in 1978, and the M.S. (Diploma) and Ph.D. degrees from the Technical University of Berlin, Berlin, Germany, in 1983 and 1988, respectively, all in physics. He is currently principal investigator in the Institute of Solid State Physics, Technical University of Berlin. In 2009, he was appointed as an Adjunct Professor of Physics at Technical University of Berlin. He has authored about 200 journal articles and conference papers, ten book contributions, and two patents, His current research interests include epitaxy and physics of semiconductor nanostructures and devices.
Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
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Zustand: Bueno. : Introducción a la epitaxia proporciona la información esencial para un curso de posgrado de nivel superior que trata sobre el crecimiento cristalino de heteroestructuras de semiconductores. La heteroepitaxia representa la base de los dispositivos electrónicos y optoelectrónicos avanzados de hoy en día y se considera uno de los principales campos en la investigación de materiales. El libro cubre las propiedades estructurales y electrónicas de las capas epitaxiales tensadas, la termodinámica y la cinética del crecimiento de capas, y la descripción de las principales técnicas de crecimiento: epitaxia en fase de vapor metalorgánica, epitaxia de haz molecular y epitaxia en fase líquida. Se tratan en detalle los semiconductores cúbicos, la relajación de la tensión por dislocaciones de desajuste, los efectos de la tensión y el confinamiento en los estados electrónicos, las estructuras superficiales y los procesos durante la nucleación y el crecimiento. La Introducción a la epitaxia requiere poco conocimiento de la física del estado sólido. Los estudiantes de ciencias naturales, ciencia de los materiales e ingeniería eléctrica, así como sus profesores, se benefician de las introducciones elementales a la teoría y la práctica del crecimiento epitaxial, apoyadas por referencias pertinentes y más de 200 ilustraciones detalladas. EAN: 9783642329692 Tipo: Libros Categoría: Tecnología|Ciencias Título: Epitaxy of Semiconductors Autor: Udo W. Pohl Idioma: en Páginas: 325 Formato: tapa dura. Artikel-Nr. Happ-2026-07-02-2ef5e00d
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Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
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Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations. Artikel-Nr. 9783642329692
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