The book gives a comprehensive review of the present state-of-the-art in ZnO R+D, including growth, doping, lattice dynamics, electric magnetic and optical properties. The emphasis is on the electric and optical properties, because this is the area where novel applications may be expected with highest promise. The book highlights not only the most recent results but gives both an overview of past research and of the present status -- not avoiding critical and controversial discussions of various aspects such as bank symmetries and laser processes. Intended to have long-lasting impact on ZnO R+D, this monograph addresses (post-)graduate students but also advanced scientists, who want to embark on ZnO research or are already involved, the present state of the art and assists them in avoiding duplication of old results (or mistakes).
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Buchbeschreibung Springer-Verlag Gmbh Aug 2010, 2010. Buch. Buchzustand: Neu. Neuware - After the invention of semiconductor-based recti ers and diodes in the rst half of the last century, the advent of the transistor paved the way for semiconductors in electronic data handling starting around the mid of the last century. The transistors widely replaced the vacuum tubes, which had even been used in the rst generation of computers, the Z3 developed by Konrad Zuse in the 1940s of the last century. The rst transistors were individually housed semiconductor devices, which had to be soldered into the electric circuits. Later on, integrated circuits were developed with increasing numbers of individual elements per square inch. The materials changed from, e. g. , PbS and Se in rf-detectors and recti ers used frequentlyin the rst halfof the last centuryoverthe groupIV element semicond- tor Ge with a band gap of 0. 7eV at room temperature to Si with a value of 1. 1eV. The increase of the gap reduced the leakage current and its temperature dependence signi cantly. Therefore, the logical step was to try GaAs with a band gap of 1. 4eV next. However, the technology of this semiconductor from the group of III V c- poundsprovedto be muchmoredif cult,thoughbeautifuldeviceconceptshadbeen developed. Therefore,GaAsanditsalloysandnanostructureswithotherIII Vc- poundslike AlGaAs or InP remained restricted in electronicsto special applications like transistors for extremely high frequencies, the so-called high electron mobility transistors (HEMT). The IT industry is still mainly based on Si and will remain so in the foreseeable nearer future. 300 pp. Englisch. Artikel-Nr. 9783642105760