This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis given to todays advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate student level. The second part considers the physics and modeling of bipolar transistors in detail. Part 3 describes basic circuit configurations, aspects of process integration and applications.
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
Versand:
EUR 15,41
Von Vereinigtes Königreich nach USA
Versand:
EUR 32,99
Von Deutschland nach USA
Anbieter: Anybook.com, Lincoln, Vereinigtes Königreich
Zustand: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,1150grams, ISBN:9783540677024. Artikel-Nr. 7203058
Anzahl: 1 verfügbar
Anbieter: Studibuch, Stuttgart, Deutschland
hardcover. Zustand: Gut. 678 Seiten; 9783540677024.3 Sprache: Deutsch Gewicht in Gramm: 5. Artikel-Nr. 550762
Anzahl: 1 verfügbar
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a rather comprehensive presentation of the physics and modeling of high-frequency bipolar transistors with particular emphasis given to silicon-based devices. I hope it will be found useful by those who do as well as by those who intend to work in the field, as it compiles and extends material presented in numerous publications in a coherent fashion. I've worked on this project for years and did my best to avoid errors. De spite all efforts it is possible that 'something' has been overlooked during copy-editing and proof-reading. If you find a mistake please let me know. Michael Reisch Kempten, December 2002 Notation It is intended here to use the most widely employed notation, in cases where the standard textbook notation is different from the SPICE notation, the latter is used. In order to make formulas more readable, model parameters represented in SPICE by a series of capital letters are written here as one capital letter with the rest in the form of a subscript (e.g. XCJC is used here instead of the XCJC used in the SPICE input). Concerning the use of lower-case and capital letters, the following rules are applied: - Time-dependent large-signal quantities are represented by lower-case let ters. The variables 't, v and p therefore denote time-dependent current, voltage and power values. Artikel-Nr. 9783540677024
Anzahl: 1 verfügbar