Physics of Semiconductor Devices - Hardcover

Über die Autorin bzw. den Autor

S. M. SZE, PHD, is Honorary Chair Professor, College of Electrical and Computer Engineering, National Chiao Tung University, Taiwan. He has made fundamental and pioneering contributions to semiconductor devices, particularly his co-discovery of the floating-gate memory (FGM) effect that has ushered in the Fourth Industrial Revolution. Dr. Sze has authored, co-authored, and edited more than 400 papers and 16 books. He is a celebrated Member of IEEE, an Academician of Academia Simica, and a member of the US National Academy of Engineering.

YIMING LI, PHD, is Full Professor of Electrical and Computer Engineering at National Chiao Tung University, Taiwan. He has been a Visiting Professor in Stanford University, Grenoble INP, and Tohoku University. He has published more than 300 technical articles in journals, conferences, and book chapters. Dr. Li is an active member of IEEE and has served on technical committees for many international professional conferences including IEDM. He is the recipient of the Pan Wen-Yuan Foundation's Research Fellowship Award and the Chinese Institute of Electrical Engineering's Outstanding Young Electrical Engineer Award.

KWOK K. NG, PHD, is now serving on the Industry Advisory Board of the ECE Department of Wayne State University, USA, and as Adjunct Professor at National Chiao Tung University, Taiwan. He joined Bell Telephone Laboratories in 1980, and continued in its spin-offs Lucent Technologies and Agere Systems. He was with SRC (Semiconductor Research Corp.) from 2007 to 2019. Dr. Ng is an IEEE Life Fellow and former Editor of IEEE Electron Device Letters. He is author of numerous publications, including the book Complete Guide to Semiconductor Devices.

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The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices

The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters.

Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p n junctions, metal semiconductor contacts, and metal insulator semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). The text then focuses on negative-resistance and power devices, and concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. The standard textbook and reference in the field of semiconductor devices, this classic volume:

• Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices
• Offers completely updated and revised information that reflects advances in device concepts, performance, and applications
• Features new discussion of topics of increased contemporary interest such as the negative capacitance and tunneling field-effect transistors, 3-dimensional flash memories, GaN modulation-doped FETs, intermediate-band solar cells, and emitter turn-off thyristors
• Includes numerous problem sets, real-world examples, tables, figures, and illustrations, several useful appendices, and a detailed solutions manual
• Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors

Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for device engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

Aus dem Klappentext

The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices

The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters.

Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p–n junctions, metal–semiconductor contacts, and metal–insulator–semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). The text then focuses on negative-resistance and power devices, and concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. The standard textbook and reference in the field of semiconductor devices, this classic volume:

• Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices
• Offers completely updated and revised information that reflects advances in device concepts, performance, and applications
• Features new discussion of topics of increased contemporary interest such as the negative capacitance and tunneling field-effect transistors, 3-dimensional flash memories, GaN modulation-doped FETs, intermediate-band solar cells, and emitter turn-off thyristors
• Includes numerous problem sets, real-world examples, tables, figures, and illustrations, several useful appendices, and a detailed solutions manual
• Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors

Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for device engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.