Principles and Analysis of Aigaas/Gaas Heterojuntion Bipolar Transistors - Hardcover

Inhaltsangabe

Compiles information from the technical literature on the physics, analysis, and modeling of an improved version of the silicon bipolar junction transistor, which incorporates a heterostructure to make it even faster than its predecessors. Emphasizes the analytic approach, but also reports results from a two-dimensional device simulator. Addressed to researchers and engineers working on the design, optimization, and characterization of heterojunction bipolar transistors, but also suitable as a text for a graduate course in semiconductor devices. Annotation c. by Book News, Inc., Portland, Or.

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