Microscale Heat Conduction in Integrated Circuits and Their Constituent Films: 6 (Microsystems) - Hardcover

Goodson, Kenneth E.; Sungtaek Ju, Y.

 
9780792385912: Microscale Heat Conduction in Integrated Circuits and Their Constituent Films: 6 (Microsystems)
Hardcover
ISBN 10: 0792385918 ISBN 13: 9780792385912
Verlag: Springer, 1999

Inhaltsangabe

Advances in the semiconductor technology have enabled steady, exponential im­ provement in the performance of integrated circuits. Miniaturization allows the integration of a larger number of transistors with enhanced switching speed. Novel transistor structures and passivation materials diminish circuit delay by minimizing parasitic electrical capacitance. These advances, however, pose several challenges for the thermal engineering of integrated circuits. The low thermal conductivities of passivation layers result in large temperature rises and temperature gradient magni­ tudes, which degrade electrical characteristics of transistors and reduce lifetimes of interconnects. As dimensions of transistors and interconnects decrease, the result­ ing changes in current density and thermal capacitance make these elements more susceptible to failure during brief electrical overstress. This work develops a set of high-resolution measurement techniques which de­ termine temperature fields in transistors and interconnects, as well as the thermal properties of their constituent films. At the heart of these techniques is the thermore­ flectance thermometry method, which is based on the temperature dependence of the reflectance of metals. Spatial resolution near 300 nm and temporal resolution near IOns are demonstrated by capturing transient temperature distributions in intercon­ nects and silicon-on-insulator (SOl) high-voltage transistors. Analyses of transient temperature data obtained from interconnect structures yield thermal conductivities and volumetric heat capacities of thin films.

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Reseña del editor

Advances in the semiconductor technology have enabled steady, exponential im­ provement in the performance of integrated circuits. Miniaturization allows the integration of a larger number of transistors with enhanced switching speed. Novel transistor structures and passivation materials diminish circuit delay by minimizing parasitic electrical capacitance. These advances, however, pose several challenges for the thermal engineering of integrated circuits. The low thermal conductivities of passivation layers result in large temperature rises and temperature gradient magni­ tudes, which degrade electrical characteristics of transistors and reduce lifetimes of interconnects. As dimensions of transistors and interconnects decrease, the result­ ing changes in current density and thermal capacitance make these elements more susceptible to failure during brief electrical overstress. This work develops a set of high-resolution measurement techniques which de­ termine temperature fields in transistors and interconnects, as well as the thermal properties of their constituent films. At the heart of these techniques is the thermore­ flectance thermometry method, which is based on the temperature dependence of the reflectance of metals. Spatial resolution near 300 nm and temporal resolution near IOns are demonstrated by capturing transient temperature distributions in intercon­ nects and silicon-on-insulator (SOl) high-voltage transistors. Analyses of transient temperature data obtained from interconnect structures yield thermal conductivities and volumetric heat capacities of thin films.

Reseña del editor

The study of thermal phenomena in microdevices has attracted significant attention recently. The interdisciplinary nature of this topic, however, makes it very difficult for researchers to fully understand details of research results presented in journal articles. For many researchers intending to be active in this field, therefore, a more comprehensive treatment, complete with sufficient background information, is urgently needed.
Advances in semiconductor device technology render the thermal characterization and design of ICs increasingly more important. The present book discusses experimental and theoretical studies of heat transfer in transistors and interconnects. A novel optical thermometry technique captures temperature fields with high temporal and spatial failures in devices that are subjected to electrical overstress (EOS) and electrostatic discharge (ESD). Also reported are techniques for determining the thermal transport properties of dielectric passivation layers and ultra-thin silicon-on-insulator (SOI) layers. Theoretical analysis on the data yields insight into the dependence of thermal properties on film processing conditions. The techniques and data presented here will greatly aid the thermal engineering of interconnects and transistors.

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Verlag
Springer
Erscheinungsdatum
1999
Sprache
Englisch
ISBN 10 
0792385918
ISBN 13 
9780792385912
Einband
Tapa dura
Anzahl der Seiten
132
Kontakt zum Hersteller
Nicht verfügbar
Verantwortliche Person
CMN Printpool Inh. Mathis Neumann
https://www.also.com/ec/cms5/en_6000/6000/index.jsp

Friedrich-Karl-Str. 9
Hamburg
Deutschland

Weitere beliebte Ausgaben desselben Titels

9781461373742: Microscale Heat Conduction in Integrated Circuits and Their Constituent Films: 6 (Microsystems, 6)

Vorgestellte Ausgabe

ISBN 10:  1461373743 ISBN 13:  9781461373742
Verlag: Springer, 1999
Softcover