Defects in SiO2 and Related Dielectrics: Science and Technology (NATO Science Series II: Mathematics, Physics and Chemistry, 2, Band 2) - Hardcover

Buch 4 von 241: NATO Science Series II: Mathematics, Physics and Chemistry
 
9780792366850: Defects in SiO2 and Related Dielectrics: Science and Technology (NATO Science Series II: Mathematics, Physics and Chemistry, 2, Band 2)
Hardcover
ISBN 10: 0792366859 ISBN 13: 9780792366850
Verlag: Springer, 2000

Inhaltsangabe

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

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Verlag
Springer
Erscheinungsdatum
2000
Sprache
Englisch
ISBN 10 
0792366859
ISBN 13 
9780792366850
Einband
Gebundene Ausgabe
Anzahl der Seiten
632
Herausgeber
Pacchioni Gianfranco, Skuja Linards, Griscom David L.
Kontakt zum Hersteller
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Darmstadt
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Deutschland

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9780792366867: Defects in SiO2 and Related Dielectrics: Science and Technology (NATO Science Series II: Mathematics, Physics and Chemistry, 2, Band 2)

Vorgestellte Ausgabe

ISBN 10:  0792366867 ISBN 13:  9780792366867
Verlag: Springer, 2009
Softcover