Molecular Beam Epitaxy: A Short History

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9780199695829: Molecular Beam Epitaxy: A Short History
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Molecular bean epitaxy (MBE) is a well recognised and highly respected source of high quality semiconductor films. After forty years of development it is now widely used in the manufacture of semiconductor devices, including transistors used in pratically every aspect of modern life.

The book provides an overview of the whole spectrum of semiconductor physics, devices and applications, but also tracks progress over the years from a historical perspective. It covers the development of the subject from its inception in the early nineteenth century to the recent millennium and emphasizes both the interaction between pure scientific push and commercial pull, on the one hand, and between physics, materials and devices, on the other. It also sets the various device developments in the context of systems requirements and explains how such developments met wide ranging consumer demands. It is written so as to appeal to undergraduate students of physics, electrical engineering and materials science and to workers already well established in the field, as well as to a non-specialist scientific readership.

Über den Autor:

John Orton won an Exhibition at Magdalen College, Oxford, where he obtained an honours degree in Physics, followed by a D Phil, with a thesis on Electron Spin Resonance in magnesium oxide. He joined Mullard (later Philips) Research Laboratories in 1960 to work on the development of the microwave maser. In 1968 he lead the Group responsible for developing compound semiconductor devices and continued to work in various aspects of semiconductor research, one of his principal interests being in the use of Molecular Beam Epitaxy to grow low-dimensional semiconductor structures. from 1989 to 1991 he was Visiting Professor in Nottingham. He was active within the Institute of Physics, serving on the Solid State Physics Committee, the Semiconductor Physics Committee and on the Editorial Board of J Phys D (Applied Physics). In 1991 he took up the Chair of Optoelectronics in the Department of Electrical and Electronic Engineering at the University of Nottingham.

Charles Thomas Foxon obtained his B.Sc. in Physics at King's College, London and his Ph.D. in Materials Science in, at Battersea College. In 1969 he joined the Mullard (now Philips) Research Laboratories where he started the first work in Europe on MBE growth of III-V compounds. In 1987 he was appointed as a Visiting Professor in the Physics Department of the Technical University in Eindhoven, the Netherlands. In October 1991, he was appointed to his present post as a Professor in the School of Physics and Astronomy at the University of Nottingham, where in collaboration with Prof John Orton he set up the first work in Europe on the growth of group III-Nitride by MBE. He is currently Chairman of the UK Nitride Consortium, a member of the UK MBE group, a member of the UK MBE group, a member of the EPSRC Peer Review College, a Fellow of the IOP, was President of the British Association for Crystal Growth (2006-2009) and was elected a Fellow of the Royal Society in 2006.

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Orton, John; Foxon, Charles Thomas
Verlag: Oxford University Press Jun 2015 (2015)
ISBN 10: 0199695822 ISBN 13: 9780199695829
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Buchbeschreibung Oxford University Press Jun 2015, 2015. Buch. Buchzustand: Neu. 253x177x32 mm. Neuware - John Orton won an Exhibition at Magdalen College, Oxford, where he obtained an honours degree in Physics, followed by a D Phil, with a thesis on Electron Spin Resonance in magnesium oxide. He joined Mullard (later Philips) Research Laboratories in 1960 to work on the development of the microwave maser. In 1968 he lead the Group responsible for developing compound semiconductor devices and continued to work in various aspects of semiconductor research, one of his 516 pp. Englisch. Artikel-Nr. 9780199695829

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