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Verlag: Springer Netherland, 2006
ISBN 10: 1402043651ISBN 13: 9781402043659
Anbieter: Buchpark, Trebbin, Deutschland
Buch
Zustand: Sehr gut. 2006. Neubindung, Buchschnitt leicht verkürzt 3006619/12.
Verlag: Springer Netherland, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: Buchpark, Trebbin, Deutschland
Buch
Zustand: Sehr gut. 2006. Neubindung, Buchrücken leicht angestossen 3008052/12.
Verlag: Springer Netherlands, 2010
ISBN 10: 9048138051ISBN 13: 9789048138050
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - A NATO Advanced Research Workshop (ARW) entitled 'Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators' was held in St. Petersburg, Russia, from June 29 to July 2, 2009. The main goal of the Workshop was to examine (at a fundamental level) the very complex scientific issues that pertain to the use of micro- and nano-electromechanical systems (MEMS and NEMS), devices and technologies in next generation commercial and defen- related applications. Micro- and nano-electromechanical systems represent rather broad and diverse technological areas, such as optical systems (micromirrors, waveguides, optical sensors, integrated subsystems), life sciences and lab equipment (micropumps, membranes, lab-on-chip, membranes, microfluidics), sensors (bio-sensors, chemical sensors, gas-phase sensors, sensors integrated with electronics) and RF applications for signal transmission (variable capacitors, tunable filters and antennas, switches, resonators). From a scientific viewpoint, this is a very multi-disciplinary field, including micro- and nano-mechanics (such as stresses in structural materials), electronic effects (e. g. charge transfer), general electrostatics, materials science, surface chemistry, interface science, (nano)tribology, and optics. It is obvious that in order to overcome the problems surrounding next-generation MEMS/NEMS devices and applications it is necessary to tackle them from different angles: theoreticians need to speak with mechanical engineers, and device engineers and modelers to listen to surface physicists. It was therefore one of the main objectives of the workshop to bring together a multidisciplinary team of distinguished researchers.
Verlag: Springer Netherlands, 2006
ISBN 10: 140204366XISBN 13: 9781402043666
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
Verlag: Springer Netherlands, 2006
ISBN 10: 1402043651ISBN 13: 9781402043659
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Buch
Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The goal of this NATO Advanced Research Workshop (ARW) entitled 'Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices', which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
Verlag: Springer Berlin, 2007
ISBN 10: 3540714901ISBN 13: 9783540714903
Anbieter: Buchpark, Trebbin, Deutschland
Buch
Zustand: Sehr gut. 2007. Neubindung, Buchschnitt leicht verkürzt, Buchecken leicht angestoßen 3768560/12.