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Semiconductor Device Modelling

Snowden, Christopher M. (Ed.)

Verlag: Springer International, New York, 1989
ISBN 10: 0387195459 / ISBN 13: 9780387195452
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Bibliografische Details

Titel: Semiconductor Device Modelling

Verlag: Springer International, New York

Erscheinungsdatum: 1989

Einband: hardcover

Zustand: Good

Zustand des Schutzumschlags: No Dust Jacket

Auflage: First Edition.

Art des Buches: Ex-Library


Printed cover showing a little wear, tear at top of spine fixed with tape, faded in places. Bookplate on pastedown, torn out labels on FEP. Ink stamps on endpapers, edges of page block, front matter. Contents otherwise clean, sound, well-preserved throughout. 111 figures in the text. Buchnummer des Verkäufers 199112

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Inhaltsangabe: Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop­ ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor­ ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis­ tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.

Inhaltsangabe: This book describes a variety of approaches to modelling modern semiconductor devices. The text contains a review of essential device and semiconductor physics followed by a summary of scattering processes which influence the operation of devices. Classical and semiclassical physical device models are summarized and illustrated. The application of physical device models to VLSI (silicon) devices is discussed. State-of-the-art developments in compound semiconductor devices and modelling are reviewed. The Monte Carlo modelling technique is presented, together with essential data and examples. Equivalent circuit modelling techniques are described in separate chapters for silicon (bipolar and MOS) and high frequency devices. Modelling of noise processes in semiconductor devices is discussed, together with several examples. The modelling of optoelectronic devices, - semiconductor lasers and photo-diodes, is discussed. Quantum modelling techniques and their application are presented, extending the text into the regime of ultra-small-scale devices. The book includes a summary of modern CAD software available to model devices and comments on important features in developing simulations. Lastly there is a chapter which discusses the practical aspects and applications of semiconductor device modelling.

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